08 January 2016


IITB Nanofabrication Facility student’s artwork (photographs) recently got featured in Raith’s annual Calendar for the year 2016.

On asking about ‘Free standing gate all around MoS2 transistor’ artwork, Prof. Saurabh Lodha, Associate Professor, Department of Electrical Engineering, IIT Bombay about the artwork, shared that, “This image shows an ultrathin (~10 nm) membrane of the 2D semiconductor MoS2 suspended between two Au electrodes and ~200 nm above an SiO2 substrate. This device is also potentially useful for sensing applications.” “At a fundamental level, we are trying to understand impact of the surrounding environment on electronic transport in MoS by wrapping different materials ‘all around’ this membrane.” Added, Naveen Kaushik, Ph.D student, IIT Bombay.

The photographs titled ‘Free standing gate all around MoS2 transistor’ and ‘Fringe Field Effect Nanowire Transistor’ has been captured by Naveen Kaushik, Ph.D student, IIT Bombay and Dolar Khachariya, M.Tech student, IIT Bombay.