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Allowed Materials in Equipment @ IITBNF

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For details on substrate size and other material possibilities, click on individual tool name.
Deposition, Growth and Annealing systems
Tool NameSubstrate allowedMaterials allowedGases allowed
2 inch Annealing Furnace (Gen purpose Forming gas/ Ar annealing furnace) Silicon/ Glass all inorganic Ar/ N2/ O2/ forming gas
2 inch Boron_Solid source Diffusion Furnace Si Wafer with RCA cleaning or Piranha cleaning as the immediate previous process allowed only silicon wafers (others under contamination clearance) N2, O2
2 inch CMOS specific FGA furnace Silicon Si,Al2O3,SiO2,TiO2 N2/ O2/ forming gas
2 inch Dry oxidation Furnace Si Wafer with RCA cleaning only silicon wafers (others under contamination clearance) N2, O2
2 inch general purpose anneal furnace Si, Quartz Dieletric N2, Ar, O2
2 inch general purpose annealing furnace_Fume hood 3 Any N2, Ar, He
2 inch N2 Annealing Furnace Silicon/ Glass Si/ SiO2/ Si3N4 N2
2 inch Phosphorous_Solid source Diffusion Furnace Si Wafer with RCA cleaning or Piranha cleaning as the immediate previous process allowed only silicon wafers (others under contamination clearance) N2, O2
2 inch Wet oxidation Furnace Si Wafer with RCA cleaning or piranha cleaning only silicon wafers (others under contamination clearance) N2, O2, H2
4 target E-beam evaporator Quartz, Silicon, Polymer, GaN Zn slug, Cr slug, Ag slug, Ta slug, Fe slug, Au slug, Pt slug(not working), AuGe slug, Co slug, Cu slug, Ti slug, Al slug, Mg slug, Pd slug, Ge slug, Gd slug, Mo slug, Mn slug, Mgo slug, W slug(not working), Tb slug, Yb slug, Ni slug, NiFe slug,si,a-si PN2
6 Target E Beam Evaporator Si, Ge, GaAs GaN, Glass, Quartz Gold, Germanium, Nick el, Gold-Germanium alloy, Titanium Nitrogen
AJA 6 Target E beam Evaporator Si, Ge, GaN, Quartz Photoresists N2, CDA
ALD Silicon, Germanium, III-V substrates NA Nitrogen, Oxygen, Argon, Ammonia
ALD LL Silicon, Germanium NA Nitrogen, Oxygen, Argon, Ammonia
AMAT - FEP Centura - DPN Chamber (Ch-A) Si/ Glass/ Ge SiO2, Al, Ti, HfO N2, O2, He
AMAT - FEP Centura - Polygen Chamber (Ch-B) Si/ Glass/ Ge SiO2, Al2O3, HfO SiH4. PH3, B2H6, NH3, NF3
AMAT - FEP Centura - RTP Chamber (Ch-C) Si/ Glass/ Ge SiO2, Al2O3, HfO N2, O2, He, Ar, H2, NH3
AMAT - PVD - Al2O3 (Ch-1) Si/ Glass/ Ge SiO2 Ar, O2
AMAT - PVD - TiN (Ch-D) Si/ Glass/ Ge Al, Al2O3, SiO2, HfO2 N2, Ar
AMAT-PVD-Preclean (Ch-C)
Atmospheric Furnace_AMAT CLEAN Lab Glass, Quartz, All kinds of semiconductor wafer Inorganic and Organic Materials N2, O2
Dielectric - sputter System Glass, Si, Ge, Sapphire, Quartz, GaN ppr, su8, PMMA, gold, Cu & other metals oxygen & Argon And Nitrogen
Dip Coater Any Any NA
Drying Oven_AMAT CLEAN Lab Glasswares NA
Electro Plating system (Cu) Silicon based devices like solar cells Any NA
Electroplating system - Au/Ni/Cu
Eppendorf FemtoJet 4x Microinjector
Fume Hood 4
Gold Electroplating System
Graphene specific Argon annealing system Si/ SiO2 Si/ SiO2, Graphene Argon, Nitrogen, Methane, FGA
Hot plate with stirrer (1)_Fume Hood 1
Hot plate with stirrer (2)_Fume Hood 1
Hot plate with stirrer (3)_2 arm glove box
Hot plate with stirrer (4)_4-arm glove box
Hot wire CVD(HWCVD) Si, Glass, Quartz SiNx, SiO2, Materials allowed at low substrate temp- SU8, Au, Al, Cu SiH4, NH3, N2, H2, B2H6
Hydrothermal Reactor_Fume Hood 2
In Thermal Evaporator Si, Ge, GaAs GaN, Glass, Quartz Indium only Nitrogen
Inductively coupled plasma CVD (ICPCVD) Si/ Ge/ GaN/ Quartz/ GaA s Si, TiN, ZnO, GaN, GaAs, Al GN2, PN2, Ar, N2O, SiH4, NH3, H2, He, CF4/ O2 for cleaning
Laser 1_3
Laser 2_4
Metal - sputter System Si/ Ge/ GaN/ Quartz/ Glass/ Saphire Si/ Ge/ GaN/ Quartz/ Glass, Re sist(S1813, SU8) Argon, Nitrogen
MFP-3D-AFM
Molecular Beam Epitaxy III Nitrides
Molecular Beam Epitaxy III-V GaAs GaAs PN2, He
Molecular Beam Epitaxy Si, Ge, Sn Si, Ge, Sn Si, Ge, Sn (Are available for Process) NA
Multi-pocket Electron-beam Evaporator (4 target - GaN) Only semiconducting substrates are allowed. No glass. Ti/ Al/ Ni/ Au PN2 for venting
Organic Evaporation System Si, Polymer, Glass Dibromobianthryl(DBBA), Calixerene, Porphyrin, Pthalocyanine, DiketoPyrroloPyrole(DPP), MoO3, DBBR, Leadchloride, methyl ammonium iodide, Tris(8-hydroxyquinolinato)aluminium (Alq3), Rubrene, Pentacene, BODPP, Indigo. Possibility of trying out deposting new polymers soluble in Acetone/ IPA/ Methanol/ Chloroform/ Toluene. TPD, CBP, NPD, TPBi, BCP polymer with MoO3 N2
pH Meter NA
PLD I Si/ Ge/ GaN/ Quartz/ GaAs, saphire Si, Ge, GaN, Quartz, GaAs, ZnO, MgO, ZnMgO, BaTiO3, SrBi2Ta2O9, PCMO, ZFO, CFO, In2O3, Ga2O3 Oxygen, Nitrogen
PLD II Si/ Ge/ GaN/ Quartz/ GaA s/ STO/ LAO/ MgO BFO/ BDFO/ LSMO/ PCMO/ PZT/ MgO/ STO/ PTFO/ PTS/ SRO / LiFePO4 / LiCoO2/ Co2MnSi Oxgen
PLD III Si, Ge, GaN Gd2O3, HfO2, La2O3, LaAlO2, GdScO2, Re2O3, Sc2O3, ZrO2, PCMO (All are of 4N purity) N2, Ar, O2 (At least 4N purity)
PLD IV Si, Ge, Sapphire BFO, BDFO, LSMO, PCMO, PZT, MgO, STO, PTFO, LifePo4, LicoO2, Co2MnSi Ar, O2, N2
PLD target making furnace
Rapid Thermal Processing(RTP) Silicon, GaAs, GaN, Sapphire, Germanium NA Nitrogen, Oxygen, Argon, FGA
Schlenk Line (2)_Fume Hood 3 NA Any N2, Ar
SILAR controller NA
Spin Coater_4 arm glove box N2, O2
Sputter (ATC 2200) Si, Ge Si, Ge Ar, N2
Sputter (Orion) Si, Ge, GaN,GaAs,LSMO,PCMO,YIG,SRO, (No Glass) Photoresist, ebeam resist, Nb, NbN, Yb, Sn, Ge, Pt, Au, Gd, IrMn, Cr, YIG, Fe, Ni, Ta, Cu, Ru, Cr, MgO, Al2O3, SnGe alloy, Ti, CoFeB, SiO2, Al, Co, W, Ag, NiFe Ar, N2, CDA
Thermal Evaporator - Al Glass, Silicon, Polymer, glass, qurtz, Ge Any material (including photoresists) that will not evaporate up to 100 C Liquid Nitrogen
Thermal Evaporator-Cr/Au FTO Glass,Quartz , Silicon, Polymer, GaAs, Polymer, Any material that can withstand 100degC,Glass substrate is not allowed
Thermogravimetric Analyzer
Tube Furnace_Fume hood 5 Glass, Quartz, All kinds of semiconductor wafers Organic, Inorganic, Metal-organic N2, O2, Ar
Ultech Furnace Anneal Si SiO2, SiNx Argon, Nitrogen
Ultech Furnace Drive In Si Si/ SiO2, Si Oxygen, Nitrogen
Ultech Furnace Dry Oxide Si Si Oxygen, Nitrogen,
Ultech Furnace i-poly Si Si/ SiO2, Si SiH4, N2
Ultech Furnace Low Temperature Oxide (LTO) Si, Ge Si/ SiO2, Ge/ GeO2 Argon, Nitrogen
Ultech Furnace n-doped poly Si Si, Si/ SiO2 PH3, SiH4, N2
Ultech Furnace Pyrogenic Oxide Si RCA cleaned wafer Si, Si/ SiO2 Oxygen, Hydrogen, Nitrogen
Ultech Furnace Silicon Nitride (SiN) Si Si, Si/ SiO2 Silane, Ammonia, Nitrogen
Ultech Furnace Silicon Oxynitride (SiON) Si Wafer Only 4 inch RCA Cleaned Si wafers N2O, Oxygen, Nitrogen
Ultrasonicator_Fume Hood 1 NA
UV-Ozone Cleaner_AMAT CLEAN Lab Any Any O2, N2
Electrical characterization
Tool NameSubstrate allowedMaterials allowedGases allowed
4 probe Measurement (Automatic) Any substrate (material should not be sticky and should adhere to the substrate) Sticky and soft samples are not allowed, Samples containing Na, K may require permission NA
4 Probe Measurement (Manual) Any substrate (material should not be sticky and should adhere to the substrate) Sticky and soft samples are not allowed, Samples containing Na, K may require permission NA
Aries(Temperature Dependent IV/CV) NA
Cryogenic probe station Si, Ge, III-V Si, Ge, III-V and 2D materials N2
Cygnus(Organic Device Characterization)
FPA (Focal Plane Array) Characterization set up GaAs/ III-V compounds III-V materials NA
Hall Measurement System Any Any, In NA
Phoenix (Temperature Dependent IV/CV) Si/ Ge/ Metal and Materials that don't vaporize at Room Temp. Si/ Ge/ Metal and Materials that don't vaporize at Room Temp. N.A.
Polaris (Stress/Long Time Measurements) Si/ Ge/ Metal and Materials that don't vaporize at Room Temp. Si/ Ge/ Metal and Materials that don't vaporize at Room Temp. N.A.
Proxima (Fast IV Measurement/ B1500) Si/ Ge/ Metal and Materials that don't vaporize at Room Temp. Si/ Ge/ Metal and Materials that don't vaporize at Room Temp. NA
RF Cryogenic Device Characterization system Si, Ge, SiC, Al2O3 NA NA
RIGEL (Keysight B1500) Si/ Ge/ Metal and Materials that don't vaporize at Room Temp. Si/ Ge/ Metal and Materials that don't vaporize at Room Temp. NA
Sirius (NBTI Setup) Si/ Ge/ Metal and Materials that don't vaporize at Room Temp. Si/ Ge/ Metal and Materials that don't vaporize at Room Temp. N.A.
Spectral Response-single pixel characterisation GaAs/ III-V compounds III-V materials Nitrogen
Vega (Room Temperature IV/ CV) Si/ Ge/ Metal and Materials that don't vaporize at Room Temp. Si/ Ge/ Metal and Materials that don't vaporize at Room Temp. NA
Material and structural characterization
Tool NameSubstrate allowedMaterials allowedGases allowed
Ambios XP-2 Profilometer Si, Glass, Sapphire No sticky and soft samples allowed,PEDOT NA
Contact Angle Instrument (GBX) Non contact measurement All materials are allowed (Na+ and K+ samples are not allowed) NA
Contact Angle System (Data Physics) Any Any NA
DektakXT Profilometer Si, Ge, Glass, Sapphire No sticky and soft sample allowed. Density should be greater than 1.001g/cm3 NA
Filmetrics Reflectometer Any All NA
Fluorescence Microscope (Z1) No substrate restriction. But maximum thickness of sample varies according to the magnification (eg for 100X, max thickness alowed is 4mm). NA NA
FTIR Si/ Glass Except hazardous materials like Lead and materials which contaminate other samples are not allowed, all organic, inorganic materials deposited on Si. Powder samples are not allowed NA
FTIR Spectrometer (Spectrum 65) Si and IR transparent substrate Any NA
HRXRD Si, Ge, Glass, Sapphire, GaAs, GaN, STO Only thin films N.A
Leica Microscope Any Any NA
microPL
Olympus Microscope Any Any NA
Olympus Microscope_AMAT CLEAN Lab Si/ Glass: NA NA
Photoluminescence Measurement set up (PL Set up) GaAs Solid semiconductor samples with emission wavelength of 700-1400nm Not allowed
Potentiostat NA Batteries, Photovoltaic Panels, Fuel cells and other electrochemical cells. Max. Cell power is 10 W NA
PPMS - Integrated cryogen-free system Any semiconductor material, Usually thin solid film or devices made on thin solid films are allowed except any substrate in powder or liquid form. Any semiconductor, thin solid film or devices made on thin solid films except anything that is in liquid or powder form. Metal contacts on semiconductor materials are allowed. No gases are allowed
SEM EVO 18 Si, III-V, Glass, Sapphire, Quartz All Materials allowed. Powdered materials allowed on case by case basis N2
Sentech Ellipsometer Si Dielectrics and Polymers NA
Temperature Dependent Spectral Response Measurement system - PL set up III-V compound semiconductors III-V (Any material that may outgass at liquid helium temperatures are not allowed.) NA
Transient Absorption Pump Probe Spectrometer III-V compound semiconductors III-V comound semiconductors (GaN, InGAN, AlGaN...AlGaAs) No gases required
UV-Vis-NIR Spectrometer - Lambda 750 Si, Ge, Glass Solid film/ liquids provided it does not contain toxic or hard to clean chemicals. NA
UV-Vis-Spectrometer - Lambda 25 (CLEAN Lab) Si/Quartz IS IT a solid state or solution state machine? It is solution state machine NA
X-ray Photoelectron Spectroscopy Thin film and powdered samples NA
Reactive Ion Etch
Tool NameSubstrate allowedMaterials allowedGases allowed
AMAT - Ashing Chamber (Ch-D) Si/ Ge Photo resist. O2
AMAT - Etch Chamber (Ch-A) Si/ Ge Polysilicon, Al, TiN, Al2O3, Si, SiO2, HfO2, TaO2 O2 , N2, SF6 , BCl3 , Cl2 , HF3, He
Ar-ion Milling Any substrate All Ar
ICPRIE (New) GaAs/ GaN GaAs/ GaN BCl3, Cl2, Ar, O2, SF6
ICPRIE (old) GaAs/ GaN GaAs/ GaN BCl3, Cl2 , Ar, O2
Plasma asher Quartz, Si ppr, su8, cblack, PDMS, PMMA, metals, oxides, Polymer(VDF-TrFe0/ BaTiO3 Oxygen, CF4, CHF3
STSRIE Si, Ge, GeSn, Diamond SiO2, Si, Ge, Photoresists, HfO2, Al2O3, TiO2, NbN, Pt SF6, CF4, CHF3, O2, N2
Lithography
Tool NameSubstrate allowedMaterials allowedGases allowed
Double Sided Aligner (DSA) Si, Ge, GaAs, GaN All that are allowed in the Nanolab NA
Karl Suss MJB3 Mask Aligner Si, GaN sio2, Si N2 gas
Karl Suss MJB4 Mask Aligner Si,GaN, GaAs, Ge sio2,si Nitrogen
Laser Writer Iron oxide mask plates/ Si wafer Iron oxide mask plates/ Si wafer NA
RaithEBL_Long Si, III-V, Glass, Sapphire, Quartz, fused silica All Materials allowed. Powdered material avoided Powdered materials considered only on case by case basis N2
RaithEBL_Short Si, III-V, Glass, Sapphire, Quartz, fused silica All Materials allowed. Powdered material avoided Powdered materials considered only on case by case basis N2
Spinner 2 inch (General Purpose) Glass, Si, Quartz, GaN, G aAs PPR, SU8, CBlack, SO D(B and P), HMDS, P3HT, PVD F, PDMS NA
Spinner 2 inch (SU8, PPR) 2 SU8, PPR, P3HT NA
Spinner 4 inch (PMMA) all All that is allowed in NYR N2
Spinner 8 inch (General Purpose) Si, Glass, GaAs positive and negative photoresist as well as EBL resist, HMDS N2
Spinner 8 inch (PPR) Si, Glass, GaAs positive and negative photoresist as well as EBL resist, HMDS N2
Bonding tools
Tool NameSubstrate allowedMaterials allowedGases allowed
1.2 Lab wet bench Silicon,quartz,Ge, GaN IPA, Acetone, BHF 2%HF and HCL Nitrogen for drying
2 inch RCA Clean Station 2 Only Si wafers, and Quartz glass NA
2-arm glove box_AMAT CLEAN Lab Any Any N2, Ar, He
4 inch RCA Clean Station 4 Nitrogen for drying of wafer
4-arm glove box_AMAT CLEAN Lab Any Any N2, Ar, He
Chemical Mechanical Planarisation Si SiO2, W NA
General Purpose Wet Bench (EC Lab) Miscellaneous All materials of IITBNF allowed All chemicals of IITBNF allowed
General Purpose Wet Bench (Wet Chemistry Lab) Miscellaneous Everything other than Sodium and Pottasium N2 gas
Nano Wet Bench Silicon,quartz,Ge Nitrogen for drying
Schlenk Line (1)_Fume Hood 1 NA Any N2, Ar
TMAH wet etch station All All materials, gold lift off
Miscellaneous
Tool NameSubstrate allowedMaterials allowedGases allowed
Barn-stead Lab-line Oven Si, III-V, Glass, Sapphire, Quartz,fused silica, PDMS All that is allowed in NYR N2
Cross section TEM sample preparation unit - Dimpler Si, Ge, GaAs GaN, Glass, sapphire NA NA
Cross section TEM sample preparation unit - Disc Cutter Si, Ge, GaAs GaN, glass, sapphire NA NA
Cross section TEM sample preparation unit - PIPS Si, Ge, GaAs GaN, Glass, sapphire NA NA
Cross section TEM sample preparation unit - Ultrasonic Cutter Si,Ge,GaAs GaN,Glass,sapphire NA NA
Dicer GaAs, Si.
EC Lab Hot air Oven NA NA NA
Flip Chip Bonder GaAs, Si, Quartz In, Al, Gold
Laser Engraving System (LES) System is made for engraving not for cutting. Sample allowed : Paper, Cardboard, Silicon, Glass, Polymers such as Acrylic sheets, Polycarbonate sheets, PDMS sheets, Steel, Aluminium Materials allowed is same as substrate allowed. However, materials/ substrates that generate excessive toxic fumes on exposure to laser are to be restricted as the exhaust has not been installed yet. NA
Logitech PM5 Precision Lapping and Polishing Machine III-V materials III-V materials N/A
Logitech WSB2 Wafer Substrate Bonding Unit III-V materials III-V materials N/A
Owlstone Vapour Generator (OVG-4)  N2
Plasma Immersion Ion Implantation (PIII) Si, Ge SiO2, SiNx, a-Si, Si, SiGe, Ge, Ni, Co, Pt, Al, Hf, Ta, Mo, W, Ti, Cr, Zr, Pd B2H6, PH3
Probe Sonicator all that needs to mixed to form a uniform solution NA NA
Scientific India Microscope NA NA NA
Spinner 2 Inch (PDMS) Glass, Si, Quartz, GaN, G aAs NA
Torrey Pines Scientific Hi-temp Hotplate Si, III-V, Glass, Sapphire, Quartz, fused silica All that is allowed in NYR NA
Torrey Pines Scientific Low-temp Hotplate Si, III-V, Glass, Sapphire, Quartz, fused silica All that is allowed in NYR NA
Tube Washer NA Quartz furnace tube NA
Vapor generator for explosive detection Si, SU-8 cantilevers, SiO2 cantilevers All material N2
Wafer bonder Si, Glass SiO2, SiNx, a-Si NA
Wire Bonder Si/ III-V Ti/ Al/ Ni/ Pt/ Au/ Cr etc N/A