Deposition, Growth and Annealing systems
Tool Name | Substrate allowed | Materials allowed | Gases allowed |
2 inch Annealing Furnace (Gen purpose Forming gas/ Ar annealing furnace) |
Silicon/ Glass |
all inorganic |
Ar/ N2/ O2/ forming gas |
2 inch Boron_Solid source Diffusion Furnace |
Si Wafer with RCA cleaning or Piranha cleaning as the immediate previous process allowed |
only silicon wafers
(others under
contamination
clearance) |
N2, O2 |
2 inch CMOS specific FGA furnace |
Silicon |
Si,Al2O3,SiO2,TiO2 |
N2/ O2/ forming gas |
2 inch Dry oxidation Furnace |
Si Wafer with RCA cleaning |
only silicon wafers
(others under
contamination
clearance) |
N2, O2 |
2 inch general purpose anneal furnace |
Si, Quartz |
Dieletric |
N2, Ar, O2 |
2 inch general purpose annealing furnace_Fume hood 3 |
Any |
|
N2, Ar, He |
2 inch N2 Annealing Furnace |
Silicon/ Glass |
Si/ SiO2/ Si3N4 |
N2 |
2 inch Phosphorous_Solid source Diffusion Furnace |
Si Wafer with RCA cleaning or Piranha cleaning as the immediate previous process allowed |
only silicon wafers
(others under
contamination
clearance) |
N2, O2 |
2 inch Wet oxidation Furnace |
Si Wafer with RCA cleaning or piranha cleaning |
only silicon wafers
(others under
contamination
clearance) |
N2, O2, H2 |
4 target E-beam evaporator |
Quartz, Silicon, Polymer, GaN |
Zn slug, Cr slug, Ag slug, Ta slug, Fe slug, Au slug, Pt slug(not working), AuGe slug, Co slug, Cu slug, Ti slug, Al slug, Mg slug, Pd slug, Ge slug, Gd slug, Mo slug, Mn slug, Mgo slug, W slug(not working), Tb slug, Yb slug, Ni slug, NiFe slug,si,a-si |
PN2 |
6 Target E Beam Evaporator |
Si, Ge, GaAs GaN, Glass, Quartz |
Gold, Germanium, Nick
el, Gold-Germanium
alloy, Titanium |
Nitrogen |
AJA 6 Target E beam Evaporator |
Si, Ge, GaN, Quartz |
Photoresists |
N2, CDA |
ALD |
Silicon, Germanium, III-V substrates |
NA |
Nitrogen, Oxygen, Argon, Ammonia |
ALD LL |
Silicon, Germanium |
NA |
Nitrogen, Oxygen, Argon, Ammonia |
AMAT - FEP Centura - DPN Chamber (Ch-A) |
Si/ Glass/ Ge |
SiO2, Al, Ti, HfO |
N2, O2, He |
AMAT - FEP Centura - Polygen Chamber (Ch-B) |
Si/ Glass/ Ge |
SiO2, Al2O3, HfO |
SiH4. PH3, B2H6, NH3, NF3 |
AMAT - FEP Centura - RTP Chamber (Ch-C) |
Si/ Glass/ Ge |
SiO2, Al2O3, HfO |
N2, O2, He, Ar, H2, NH3 |
AMAT - PVD - Al2O3 (Ch-1) |
Si/ Glass/ Ge |
SiO2 |
Ar, O2 |
AMAT - PVD - TiN (Ch-D) |
Si/ Glass/ Ge |
Al, Al2O3, SiO2,
HfO2 |
N2, Ar |
AMAT-PVD-Preclean (Ch-C) |
|
|
|
Atmospheric Furnace_AMAT CLEAN Lab |
Glass, Quartz, All kinds of semiconductor wafer |
Inorganic and Organic Materials |
N2, O2 |
Dielectric - sputter System |
Glass, Si, Ge, Sapphire, Quartz, GaN |
ppr, su8, PMMA, gold, Cu
& other metals |
oxygen & Argon And Nitrogen |
Dip Coater |
Any |
Any |
NA |
Drying Oven_AMAT CLEAN Lab |
Glasswares |
|
NA |
Electro Plating system (Cu) |
Silicon based devices like solar cells |
Any |
NA |
Electroplating system - Au/Ni/Cu |
|
|
|
Eppendorf FemtoJet 4x Microinjector |
|
|
|
Fume Hood 4 |
|
|
|
Gold Electroplating System |
|
|
|
Graphene specific Argon annealing system |
Si/ SiO2 |
Si/ SiO2, Graphene |
Argon, Nitrogen, Methane, FGA |
Hot plate with stirrer (1)_Fume Hood 1 |
|
|
|
Hot plate with stirrer (2)_Fume Hood 1 |
|
|
|
Hot plate with stirrer (3)_2 arm glove box |
|
|
|
Hot plate with stirrer (4)_4-arm glove box |
|
|
|
Hot wire CVD(HWCVD) |
Si, Glass, Quartz |
SiNx, SiO2, Materials
allowed at low
substrate temp-
SU8, Au, Al, Cu |
SiH4, NH3, N2, H2, B2H6 |
Hydrothermal Reactor_Fume Hood 2 |
|
|
|
In Thermal Evaporator |
Si, Ge, GaAs GaN, Glass, Quartz |
Indium only |
Nitrogen |
Inductively coupled plasma CVD (ICPCVD) |
Si/ Ge/ GaN/ Quartz/ GaA s |
Si, TiN, ZnO,
GaN, GaAs, Al |
GN2, PN2, Ar, N2O, SiH4, NH3, H2, He, CF4/ O2 for cleaning |
Laser 1_3 |
|
|
|
Laser 2_4 |
|
|
|
Metal - sputter System |
Si/ Ge/ GaN/ Quartz/ Glass/ Saphire |
Si/ Ge/ GaN/ Quartz/ Glass, Re
sist(S1813, SU8) |
Argon, Nitrogen |
MFP-3D-AFM |
|
|
|
Molecular Beam Epitaxy III Nitrides |
|
|
|
Molecular Beam Epitaxy III-V |
GaAs |
GaAs |
PN2, He |
Molecular Beam Epitaxy Si, Ge, Sn |
Si, Ge, Sn |
Si, Ge, Sn (Are available for Process) |
NA |
Multi-pocket Electron-beam Evaporator (4 target - GaN) |
Only semiconducting substrates are allowed. No glass. |
Ti/ Al/ Ni/ Au |
PN2 for venting |
Organic Evaporation System |
Si, Polymer, Glass |
Dibromobianthryl(DBBA), Calixerene, Porphyrin, Pthalocyanine, DiketoPyrroloPyrole(DPP), MoO3, DBBR, Leadchloride, methyl ammonium iodide, Tris(8-hydroxyquinolinato)aluminium (Alq3), Rubrene, Pentacene, BODPP, Indigo. Possibility of trying out deposting new polymers soluble in Acetone/ IPA/ Methanol/ Chloroform/ Toluene.
TPD, CBP, NPD, TPBi, BCP polymer with MoO3 |
N2 |
pH Meter |
|
|
NA |
PLD I |
Si/ Ge/ GaN/ Quartz/ GaAs, saphire |
Si, Ge, GaN, Quartz, GaAs, ZnO, MgO, ZnMgO, BaTiO3, SrBi2Ta2O9, PCMO, ZFO, CFO, In2O3, Ga2O3 |
Oxygen, Nitrogen |
PLD II |
Si/ Ge/ GaN/ Quartz/ GaA s/ STO/ LAO/ MgO |
BFO/ BDFO/ LSMO/ PCMO/ PZT/ MgO/ STO/ PTFO/ PTS/ SRO / LiFePO4 / LiCoO2/ Co2MnSi |
Oxgen |
PLD III |
Si, Ge, GaN |
Gd2O3, HfO2, La2O3, LaAlO2, GdScO2, Re2O3, Sc2O3, ZrO2, PCMO (All are of 4N purity) |
N2, Ar, O2 (At least 4N purity) |
PLD IV |
Si, Ge, Sapphire |
BFO, BDFO, LSMO, PCMO, PZT, MgO, STO, PTFO, LifePo4, LicoO2, Co2MnSi |
Ar, O2, N2 |
PLD target making furnace |
|
|
|
Rapid Thermal Processing(RTP) |
Silicon, GaAs, GaN, Sapphire, Germanium |
NA |
Nitrogen, Oxygen, Argon, FGA |
Schlenk Line (2)_Fume Hood 3 |
NA |
Any |
N2, Ar |
SILAR controller |
|
|
NA |
Spin Coater_4 arm glove box |
|
|
N2, O2 |
Sputter (ATC 2200) |
Si, Ge |
Si, Ge |
Ar, N2 |
Sputter (Orion) |
Si, Ge, GaN,GaAs,LSMO,PCMO,YIG,SRO, (No Glass) |
Photoresist, ebeam resist, Nb, NbN, Yb, Sn, Ge, Pt, Au, Gd, IrMn, Cr, YIG, Fe, Ni, Ta, Cu, Ru, Cr, MgO, Al2O3, SnGe alloy, Ti, CoFeB, SiO2, Al, Co, W, Ag, NiFe |
Ar, N2, CDA |
Thermal Evaporator - Al |
Glass, Silicon, Polymer, glass, qurtz, Ge |
Any material
(including
photoresists) that will
not evaporate up to
100 C |
Liquid Nitrogen |
Thermal Evaporator-Cr/Au |
FTO Glass,Quartz , Silicon, Polymer, GaAs, |
Polymer, Any material
that can withstand
100degC,Glass substrate is not allowed |
|
Thermogravimetric Analyzer |
|
|
|
Tube Furnace_Fume hood 5 |
Glass, Quartz, All kinds of semiconductor wafers |
Organic, Inorganic, Metal-organic |
N2, O2, Ar |
Ultech Furnace Anneal |
Si |
SiO2, SiNx |
Argon, Nitrogen |
Ultech Furnace Drive In |
Si |
Si/ SiO2, Si |
Oxygen, Nitrogen |
Ultech Furnace Dry Oxide |
Si |
Si |
Oxygen, Nitrogen, |
Ultech Furnace i-poly |
Si |
Si/ SiO2, Si |
SiH4, N2 |
Ultech Furnace Low Temperature Oxide (LTO) |
Si, Ge |
Si/ SiO2, Ge/ GeO2 |
Argon, Nitrogen |
Ultech Furnace n-doped poly |
Si |
Si, Si/ SiO2 |
PH3, SiH4, N2 |
Ultech Furnace Pyrogenic Oxide |
Si RCA cleaned wafer |
Si, Si/ SiO2 |
Oxygen, Hydrogen, Nitrogen |
Ultech Furnace Silicon Nitride (SiN) |
Si |
Si, Si/ SiO2 |
Silane, Ammonia, Nitrogen |
Ultech Furnace Silicon Oxynitride (SiON) |
Si Wafer |
Only 4 inch RCA Cleaned
Si wafers |
N2O, Oxygen, Nitrogen |
Ultrasonicator_Fume Hood 1 |
|
|
NA |
UV-Ozone Cleaner_AMAT CLEAN Lab |
Any |
Any |
O2, N2 |
Electrical characterization
Tool Name | Substrate allowed | Materials allowed | Gases allowed |
4 probe Measurement (Automatic) |
Any substrate (material should not be sticky and should adhere to the substrate) |
Sticky and soft
samples are not
allowed, Samples
containing Na, K may
require permission |
NA |
4 Probe Measurement (Manual) |
Any substrate (material should not be sticky and should adhere to the substrate) |
Sticky and soft samples are not allowed, Samples containing Na, K may require permission |
NA |
Aries(Temperature Dependent IV/CV) |
|
|
NA |
Cryogenic probe station |
Si, Ge, III-V |
Si, Ge, III-V and 2D materials |
N2 |
Cygnus(Organic Device Characterization) |
|
|
|
FPA (Focal Plane Array) Characterization set up |
GaAs/ III-V compounds |
III-V materials |
NA |
Hall Measurement System |
Any |
Any, In |
NA |
Phoenix (Temperature Dependent IV/CV) |
Si/ Ge/ Metal and Materials that don't vaporize at Room Temp. |
Si/ Ge/ Metal and
Materials that don't
vaporize at Room
Temp. |
N.A. |
Polaris (Stress/Long Time Measurements) |
Si/ Ge/ Metal and Materials that don't vaporize at Room Temp. |
Si/ Ge/ Metal and
Materials that don't
vaporize at Room
Temp. |
N.A. |
Proxima (Fast IV Measurement/ B1500) |
Si/ Ge/ Metal and Materials that don't vaporize at Room Temp. |
Si/ Ge/ Metal and
Materials that don't
vaporize at Room
Temp. |
NA |
RF Cryogenic Device Characterization system |
Si, Ge, SiC, Al2O3 |
NA |
NA |
RIGEL (Keysight B1500) |
Si/ Ge/ Metal and Materials that don't vaporize at Room Temp. |
Si/ Ge/ Metal and
Materials that don't
vaporize at Room
Temp. |
NA |
Sirius (NBTI Setup) |
Si/ Ge/ Metal and Materials that don't vaporize at Room Temp. |
Si/ Ge/ Metal and
Materials that don't
vaporize at Room
Temp. |
N.A. |
Spectral Response-single pixel characterisation |
GaAs/ III-V compounds |
III-V materials |
Nitrogen |
Vega (Room Temperature IV/ CV) |
Si/ Ge/ Metal and Materials that don't vaporize at Room Temp. |
Si/ Ge/ Metal and
Materials that don't
vaporize at Room
Temp. |
NA |
Material and structural characterization
Tool Name | Substrate allowed | Materials allowed | Gases allowed |
Ambios XP-2 Profilometer |
Si, Glass, Sapphire |
No sticky and soft
samples allowed,PEDOT |
NA |
Contact Angle Instrument (GBX) |
Non contact measurement |
All materials are allowed
(Na+ and K+ samples are not allowed) |
NA |
Contact Angle System (Data Physics) |
Any |
Any |
NA |
DektakXT Profilometer |
Si, Ge, Glass, Sapphire |
No sticky and soft sample allowed.
Density should be greater than 1.001g/cm3 |
NA |
Filmetrics Reflectometer |
Any |
All |
NA |
Fluorescence Microscope (Z1) |
No substrate restriction. But maximum thickness of sample varies according to the magnification (eg for 100X, max thickness alowed is 4mm). |
NA |
NA |
FTIR |
Si/ Glass |
Except hazardous
materials like Lead
and materials which
contaminate other
samples are not
allowed, all
organic, inorganic
materials deposited
on Si.
Powder samples are not allowed |
NA |
FTIR Spectrometer (Spectrum 65) |
Si and IR transparent substrate |
Any |
NA |
HRXRD |
Si, Ge, Glass, Sapphire, GaAs, GaN, STO |
Only thin films |
N.A |
Leica Microscope |
Any |
Any |
NA |
microPL |
|
|
|
Olympus Microscope |
Any |
Any |
NA |
Olympus Microscope_AMAT CLEAN Lab |
Si/ Glass: NA |
|
NA |
Photoluminescence Measurement set up (PL Set up) |
GaAs |
Solid semiconductor
samples with
emission wavelength
of 700-1400nm |
Not allowed |
Potentiostat |
NA |
Batteries, Photovoltaic Panels, Fuel cells and other electrochemical cells. Max. Cell power is 10 W |
NA |
PPMS - Integrated cryogen-free system |
Any semiconductor material, Usually thin solid film or devices made on thin solid films are allowed except any substrate in powder or liquid form. |
Any semiconductor, thin solid film or devices made on thin solid films except anything that is in liquid or powder form. Metal contacts on semiconductor materials are allowed. |
No gases are allowed |
SEM EVO 18 |
Si, III-V, Glass, Sapphire, Quartz |
All Materials allowed. Powdered materials allowed on case by case basis |
N2 |
Sentech Ellipsometer |
Si |
Dielectrics and
Polymers |
NA |
Temperature Dependent Spectral Response Measurement system - PL set up |
III-V compound semiconductors |
III-V (Any material that may outgass at liquid helium temperatures are not allowed.) |
NA |
Transient Absorption Pump Probe Spectrometer |
III-V compound semiconductors |
III-V comound semiconductors (GaN, InGAN, AlGaN...AlGaAs) |
No gases required |
UV-Vis-NIR Spectrometer - Lambda 750 |
Si, Ge, Glass |
Solid film/ liquids
provided it does not
contain toxic or hard
to clean chemicals. |
NA |
UV-Vis-Spectrometer - Lambda 25 (CLEAN Lab) |
Si/Quartz |
IS IT a solid state or solution state machine?
It is solution state machine |
NA |
X-ray Photoelectron Spectroscopy |
Thin film and powdered samples |
|
NA |
Reactive Ion Etch
Tool Name | Substrate allowed | Materials allowed | Gases allowed |
AMAT - Ashing Chamber (Ch-D) |
Si/ Ge |
Photo resist. |
O2 |
AMAT - Etch Chamber (Ch-A) |
Si/ Ge |
Polysilicon, Al, TiN, Al2O3, Si, SiO2, HfO2, TaO2 |
O2 , N2, SF6 , BCl3 , Cl2 , HF3, He |
Ar-ion Milling |
Any substrate |
All |
Ar |
ICPRIE (New) |
GaAs/ GaN |
GaAs/ GaN |
BCl3, Cl2, Ar, O2, SF6 |
ICPRIE (old) |
GaAs/ GaN |
GaAs/ GaN |
BCl3, Cl2 , Ar, O2 |
Plasma asher |
Quartz, Si |
ppr, su8, cblack,
PDMS, PMMA,
metals, oxides, Polymer(VDF-TrFe0/ BaTiO3 |
Oxygen, CF4, CHF3 |
STSRIE |
Si, Ge, GeSn, Diamond |
SiO2, Si, Ge, Photoresists, HfO2, Al2O3, TiO2, NbN, Pt |
SF6, CF4, CHF3, O2, N2 |
Lithography
Tool Name | Substrate allowed | Materials allowed | Gases allowed |
Double Sided Aligner (DSA) |
Si, Ge, GaAs, GaN |
All that are allowed in the Nanolab |
NA |
Karl Suss MJB3 Mask Aligner |
Si, GaN |
sio2, Si |
N2 gas |
Karl Suss MJB4 Mask Aligner |
Si,GaN, GaAs, Ge |
sio2,si |
Nitrogen |
Laser Writer |
Iron oxide mask plates/ Si wafer |
Iron oxide mask plates/ Si wafer |
NA |
RaithEBL_Long |
Si, III-V, Glass, Sapphire, Quartz, fused silica |
All Materials allowed. Powdered material avoided
Powdered materials considered only on case by case basis |
N2 |
RaithEBL_Short |
Si, III-V, Glass, Sapphire, Quartz, fused silica |
All Materials allowed. Powdered material avoided
Powdered materials considered only on case by case basis |
N2 |
Spinner 2 inch (General Purpose) |
Glass, Si, Quartz, GaN, G aAs |
PPR, SU8, CBlack, SO
D(B and
P), HMDS, P3HT, PVD
F, PDMS |
NA |
Spinner 2 inch (SU8, PPR) |
2 |
SU8, PPR, P3HT |
NA |
Spinner 4 inch (PMMA) |
all |
All that is allowed in NYR |
N2 |
Spinner 8 inch (General Purpose) |
Si, Glass, GaAs |
positive and negative
photoresist as well as
EBL resist, HMDS |
N2 |
Spinner 8 inch (PPR) |
Si, Glass, GaAs |
positive and negative
photoresist as well as
EBL resist, HMDS |
N2 |
Bonding tools
Tool Name | Substrate allowed | Materials allowed | Gases allowed |
1.2 Lab wet bench |
Silicon,quartz,Ge, GaN |
IPA, Acetone, BHF 2%HF and HCL |
Nitrogen for drying |
2 inch RCA Clean Station |
2 |
Only Si wafers, and Quartz glass |
NA |
2-arm glove box_AMAT CLEAN Lab |
Any |
Any |
N2, Ar, He |
4 inch RCA Clean Station |
4 |
|
Nitrogen for drying of wafer |
4-arm glove box_AMAT CLEAN Lab |
Any |
Any |
N2, Ar, He |
Chemical Mechanical Planarisation |
Si |
SiO2, W |
NA |
General Purpose Wet Bench (EC Lab) |
Miscellaneous |
All materials of IITBNF allowed |
All chemicals of IITBNF allowed |
General Purpose Wet Bench (Wet Chemistry Lab) |
Miscellaneous |
Everything other than Sodium and Pottasium |
N2 gas |
Nano Wet Bench |
Silicon,quartz,Ge |
|
Nitrogen for drying |
Schlenk Line (1)_Fume Hood 1 |
NA |
Any |
N2, Ar |
TMAH wet etch station |
All |
All materials, gold lift
off |
|
Miscellaneous
Tool Name | Substrate allowed | Materials allowed | Gases allowed |
Barn-stead Lab-line Oven |
Si, III-V, Glass, Sapphire, Quartz,fused silica, PDMS |
All that is allowed in NYR |
N2 |
Cross section TEM sample preparation unit - Dimpler |
Si, Ge, GaAs GaN, Glass, sapphire |
NA |
NA |
Cross section TEM sample preparation unit - Disc Cutter |
Si, Ge, GaAs GaN, glass, sapphire |
NA |
NA |
Cross section TEM sample preparation unit - PIPS |
Si, Ge, GaAs GaN, Glass, sapphire |
NA |
NA |
Cross section TEM sample preparation unit - Ultrasonic Cutter |
Si,Ge,GaAs GaN,Glass,sapphire |
NA |
NA |
Dicer |
GaAs, Si. |
|
|
EC Lab Hot air Oven |
NA |
NA |
NA |
Flip Chip Bonder |
GaAs, Si, Quartz |
In, Al, Gold |
|
Laser Engraving System (LES) |
System is made for engraving not for cutting. Sample allowed : Paper, Cardboard, Silicon, Glass, Polymers such as Acrylic sheets, Polycarbonate sheets, PDMS sheets, Steel, Aluminium |
Materials allowed is same as substrate allowed. However, materials/ substrates that generate excessive toxic fumes on exposure to laser are to be restricted as the exhaust has not been installed yet. |
NA |
Logitech PM5 Precision Lapping and Polishing Machine |
III-V materials |
III-V materials |
N/A |
Logitech WSB2 Wafer Substrate Bonding Unit |
III-V materials |
III-V materials |
N/A |
Owlstone Vapour Generator (OVG-4) |
|
 |
N2 |
Plasma Immersion Ion Implantation (PIII) |
Si, Ge |
SiO2, SiNx, a-Si, Si, SiGe, Ge, Ni, Co, Pt, Al,
Hf, Ta, Mo, W, Ti, Cr,
Zr, Pd |
B2H6, PH3 |
Probe Sonicator |
all that needs to mixed to form a uniform solution |
NA |
NA |
Scientific India Microscope |
NA |
NA |
NA |
Spinner 2 Inch (PDMS) |
Glass, Si, Quartz, GaN, G aAs |
|
NA |
Torrey Pines Scientific Hi-temp Hotplate |
Si, III-V, Glass, Sapphire, Quartz, fused silica |
All that is allowed in NYR |
NA |
Torrey Pines Scientific Low-temp Hotplate |
Si, III-V, Glass, Sapphire, Quartz, fused silica |
All that is allowed in NYR |
NA |
Tube Washer |
NA |
Quartz furnace tube |
NA |
Vapor generator for explosive detection |
Si, SU-8 cantilevers, SiO2 cantilevers |
All material |
N2 |
Wafer bonder |
Si, Glass |
SiO2, SiNx, a-Si |
NA |
Wire Bonder |
Si/ III-V |
Ti/ Al/ Ni/ Pt/ Au/ Cr etc |
N/A |