Deposition, Growth & Anneal Systems


During semiconductor device fabrication, thin film growth and deposition steps typically occur more number of times than any other process. These are often critical processes that require careful thickness and quality control. For example, during silicon (Si) transistor fabrication, growth of a thin film of silicon dioxide (SiO2) is generally required immediately after the RCA clean process. This oxide can be grown on the Si wafer surface using different processes that define its growth rate and quality. Whatever the chosen process, maintaining tight control of process conditions and minimizing contamination on the Si wafer surface during the growth process is critical for final device performance. Hence, separate process-based oxide growth furnaces are needed for the same.

Thin film depositions of other materials are also needed at various stages of device fabrication – from the initial active semiconducting layers to the final metal contact layers. With new materials being explored for various applications today, dedicated systems and novel deposition techniques are required to integrate them into devices. Pulsed laser deposition (PLD) and atomic layer deposition (ALD) are two examples of such enabling capabilities available at IITBNF, along with conventional silicon processing equipment. Conventional metal and insulator deposition tools, along with dedicated anneal systems, complete the expansive gamut of deposition capabilities at IITBNF for introducing new materials onto the silicon platform and fabricating new device structures.

The following list includes dedicated growth, deposition and anneal systems for 2”, 4” and 8” silicon wafers at IITBNF; along with separate tools for other substrate materials and sizes. Implantation tools are also included in the list since they are used in conjunction with anneal systems.

# Instrument Location Contamination category
1 Inductively coupled plasma CVD (ICPCVD) Nano Lab semi clean b
2 Rapid Thermal Processing(RTP) Nano Lab gold contaminated
3 Hot wire CVD(HWCVD) Micro2 Lab gold contaminated
4 Organic Evaporation System Micro2 Lab gold contaminated
5 Ultech Furnace Dry Oxide Nano Lab clean
6 2 inch General purpose Forming gas(FGA)/ Ar /N2 annealing furnace Micro1 Lab gold contaminated
7 2 inch Boron_Solid source Diffusion Furnace Micro1 Lab clean
8 2 inch CMOS specific FGA furnace Micro1 Lab semi clean b
9 2 inch Dry oxidation Furnace Micro1 Lab clean
10 2 inch Wet oxidation Furnace Micro1 Lab clean
11 2 inch N2 Annealing Furnace Micro1 Lab clean
12 2 inch Phosphorous_Solid source Diffusion Furnace Micro1 Lab clean
13 4 target E-beam evaporator Micro1 Lab gold contaminated
14 Dielectric - sputter System Micro1 Lab gold contaminated
15 Metal - sputter System Micro1 Lab gold contaminated
16 Thermal Evaporator - Al Micro1 Lab gold contaminated
17 Thermal Evaporator-Cr/Au Micro1 Lab gold contaminated
18 PLD I Nanoelectronics Processing Lab (NanoE bldg, 1st floor) gold contaminated
19 PLD II Nanoelectronics Processing Lab (NanoE bldg, 1st floor) clean
20 6 Target E Beam Evaporator MBE Clean Room 2 (NanoE bldg, Gr floor) gold contaminated
21 AMAT - FEP Centura - DPN Chamber (Ch-A) AMAT Lab clean
22 AMAT - FEP Centura - Polygen Chamber (Ch-B) AMAT Lab semi clean a
23 AMAT - FEP Centura - RTP Chamber (Ch-C) AMAT Lab clean
24 AMAT - PVD - Al2O3 (Ch-1) AMAT Lab semi clean a
25 AMAT - PVD - TiN (Ch-D) AMAT Lab semi clean a
26 PLD target making furnace EC Lab clean
27 Electro Plating system (Cu) EC Lab semi-clean pv
28 Molecular Beam Epitaxy III-V MBE Clean Room 1 (NanoE bldg, Gr floor) clean (III,V compounds)
29 In Thermal Evaporator MBE Clean Room 2 (NanoE bldg, Gr floor) gold contaminated
30 Ultech Furnace Silicon Oxynitride (SiON) Nano Lab clean
31 Ultech Furnace Pyrogenic Oxide Nano Lab clean
32 Ultech Furnace Low Temperature Oxide (LTO) Nano Lab clean
33 Ultech Furnace Silicon Nitride (SiN) Nano Lab clean
34 Ultech Furnace Drive In Nano Lab clean
35 Ultech Furnace i-poly Nano Lab gold contaminated
36 Ultech Furnace Anneal Nano Lab clean
37 Ultech Furnace n-doped poly Nano Lab clean
38 Sputter (ATC 2200) Nano Lab semi clean b
39 Sputter (Orion) Nano Lab gold contaminated
40 ALD Nano Lab semi clean b
41 ALD LL Nano Lab semi clean b
42 Electroplating system - Au/Ni/Cu EC Lab gold contaminated
43 Multi-pocket Electron-beam Evaporator (4 target - GaN) Micro1 Yellow Room gold contaminated
44 Multi target sputter – AJA International NMPF Lab gold contaminated
45 Parylene CVD – SCS NMPF Lab gold contaminated
46 LPCVD Furnace_SixNy NMPF Lab clean
47 LPCVD Furnace_PolySi Doped PolySi NMPF Lab clean
48 LPCVD Furnace_Thermal oxidation NMPF Lab clean
49 Rapid Thermal Annealing – Annealsys NMPF Lab gold contaminated
50 Plasma Doping System Nanoelectronics Processing Lab (NanoE bldg, 1st floor) semi clean b
51 Molecular Beam Epitaxy III Nitrides MBE Clean Room 1 (NanoE bldg, Gr floor) semi clean a
52 Molecular Beam Epitaxy Si Ge Sn MBE Clean Room 1 (NanoE bldg, Gr floor) clean
53 Gold Electroplating System Micro1 Lab clean
54 PLD III Nanoelectronics Processing Lab (NanoE bldg, 1st floor) clean
55 PLD IV Nanoelectronics Processing Lab (NanoE bldg, 1st floor) clean
56 Hot plate with stirrer (1)_Fume Hood 1 7.1 Lab tbd
57 Hot plate with stirrer (2)_Fume Hood 1 7.1 Lab tbd
58 2 inch general purpose annealing furnace_Fume hood 3 7.1 Lab off line a
59 Dip Coater 7.1 Lab gold contaminated
60 Hot plate with stirrer (3)_2 arm glove box 7.1 Lab tbd
61 Hot plate with stirrer (4)_4-arm glove box 7.1 Lab tbd
62 Schlenk Line (2)_Fume Hood 3 7.1 Lab gold contaminated
63 Atmospheric Furnace_7.1 Lab 7.1 Lab tbd
64 Drying Oven_7.1 Lab 7.1 Lab tbd
65 Tube Furnace_Fume hood 5 7.1 Lab tbd
66 AJA 6 Target E beam Evaporator Nanoelectronics Processing Lab (NanoE bldg, 1st floor) gold contaminated
67 AMAT-PVD-Preclean (Ch-C) AMAT Lab clean
68 pH Meter 7.1 Lab clean
69 Spin Coater_4 arm glove box 7.1 Lab clean
70 SILAR controller 7.1 Lab clean
71 Thermogravimetric Analyzer 7.1 Lab clean
72 Hydrothermal Reactor_Fume Hood 2 7.1 Lab clean
73 Fume Hood 4 7.1 Lab clean
74 Laser 2_4 Nanoelectronics Processing Lab (NanoE bldg, 1st floor) clean
75 Eppendorf FemtoJet 4x Microinjector Bio Sensors Lab (NanoE bldg, 7th floor) clean
76 Laser 1_3 Nanoelectronics Processing Lab (NanoE bldg, 1st floor) clean
77 Magneto Optic Kerr Effect (MOKE) Spintronics Lab clean
78 Magnetoresistance Setup Applied Quantum Mechanics Lab 2(NanoE bldg, 5th floor) clean
79 Magnetoresistance Setup with Vector Network Anlyser (VNA) and Rotating stage Spintronics Lab clean
80 2D Materials CVD 2D Materials and Devices Lab clean
To understand what the contamination categories mean, click here
To check if your process plan complies with contamination rules, click here
To view current working status of all the instruments, click here
Last updated on: 20-Jul-2022