| Tool Name | Substrate allowed | Materials allowed | Gases allowed |
|---|---|---|---|
| AMAT - FEP Centura - DPN Chamber (Ch-A) | Si/ Glass/ Ge | SiO2, Al, Ti, HfO | N2, O2, He |
| AMAT - FEP Centura - Polygen Chamber (Ch-B) | Si/ Glass/ Ge | SiO2, Al2O3, HfO | SiH4. PH3, B2H6, NH3, NF3 |
| AMAT - FEP Centura - RTP Chamber (Ch-C) | Si/ Glass/ Ge | SiO2, Al2O3, HfO | N2, O2, He, Ar, H2, NH3 |
| AMAT - PVD - Al2O3 (Ch-1) | Si/ Glass/ Ge | SiO2 | Ar, O2 |
| AMAT - PVD - TiN (Ch-D) | Si/ Glass/ Ge | Al, Al2O3, SiO2, HfO2 | N2, Ar |
| AMAT-PVD-Preclean (Ch-C) | |||
| AMAT - Ashing Chamber (Ch-D) | Si/ Ge | Photo resist. | O2 |
| AMAT - Etch Chamber (Ch-A) | Si/ Ge | Polysilicon, Al, TiN, Al2O3, Si, SiO2, HfO2, TaO2 | O2 , N2, SF6 , BCl3 , Cl2 , HF3, He |
| Tool Name | Substrate allowed | Materials allowed | Gases allowed |
|---|---|---|---|
| Electro Plating system (Cu) | Silicon based devices like solar cells | Any | NA |
| Electroplating system - Au/Ni/Cu | |||
| PLD target making furnace | |||
| General Purpose Wet Bench (EC Lab) | Miscellaneous | All materials of IITBNF allowed | All chemicals of IITBNF allowed |
| Cross section TEM sample preparation unit - Dimpler | Si, Ge, GaAs GaN, Glass, sapphire | NA | NA |
| Cross section TEM sample preparation unit - Disc Cutter | Si, Ge, GaAs GaN, glass, sapphire | NA | NA |
| Cross section TEM sample preparation unit - PIPS | Si, Ge, GaAs GaN, Glass, sapphire | NA | NA |
| Cross section TEM sample preparation unit - Ultrasonic Cutter | Si,Ge,GaAs GaN,Glass,sapphire | NA | NA |
| EC Lab Hot air Oven | NA | NA | NA |
| Logitech PM5 Precision Lapping and Polishing Machine | III-V materials | III-V materials | N/A |
| Logitech WSB2 Wafer Substrate Bonding Unit | III-V materials | III-V materials | N/A |
| Spinner 2 Inch (PDMS) | Glass, Si, Quartz, GaN, G aAs | NA | |
| Vapor generator for explosive detection | Si, SU-8 cantilevers, SiO2 cantilevers | All material | N2 |
| Tool Name | Substrate allowed | Materials allowed | Gases allowed |
|---|---|---|---|
| Molecular Beam Epitaxy III Nitrides | |||
| Molecular Beam Epitaxy III-V | GaAs | Ga, In, Al, As, Si | PN2, He |
| Molecular Beam Epitaxy Si Ge Sn | Si, Ge, Sn | Si, Ge, Sn (Are available for Process) | NA |
| Tool Name | Substrate allowed | Materials allowed | Gases allowed |
|---|---|---|---|
| 6 Target E Beam Evaporator | Si, Ge, GaAs GaN, Glass, Quartz | Gold, Nickel, Gold-Germanium alloy, Titanium | Nitrogen |
| In Thermal Evaporator | Si, Ge, GaAs GaN, Glass, Quartz | Indium only | Nitrogen |
| Dicer | GaAs, Si. | ||
| Flip Chip Bonder | GaAs, Si, Quartz | In, Al, Gold |
| Tool Name | Substrate allowed | Materials allowed | Gases allowed |
|---|---|---|---|
| Wire Bonder (TPT HB16)_Aluminium | NA |
| Tool Name | Substrate allowed | Materials allowed | Gases allowed |
|---|---|---|---|
| 2 inch Boron_Solid source Diffusion Furnace | Si Wafer with RCA cleaning or Piranha cleaning as the immediate previous process allowed | only silicon wafers (others under contamination clearance) | N2, O2 |
| 2 inch CMOS specific FGA furnace | Silicon | Si,SiO2 | N2/ O2/ forming gas |
| 2 inch Dry oxidation Furnace | Si Wafer with RCA cleaning | only silicon wafers (others under contamination clearance) | N2, O2 |
| 2 inch General purpose Forming gas(FGA)/ Ar /N2 annealing furnace | Silicon/ Glass | all inorganic | Ar/ N2/ O2/ forming gas |
| 2 inch N2 Annealing Furnace | Silicon/ Glass | Si/ SiO2/ Si3N4 | N2 |
| 2 inch Phosphorous_Solid source Diffusion Furnace | Si Wafer with RCA cleaning or Piranha cleaning as the immediate previous process allowed | only silicon wafers (others under contamination clearance) | N2, O2 |
| 2 inch Wet oxidation Furnace | Si Wafer with RCA cleaning or piranha cleaning | only silicon wafers (others under contamination clearance) | N2, O2, H2 |
| 4 target E-beam evaporator | Quartz, Silicon, Polymer, GaN | Zn slug, Cr slug, Ag slug, Ta slug, Fe slug, Au slug, Pt slug(not working), AuGe slug, Co slug, Cu slug, Ti slug, Al slug, Mg slug, Pd slug, Ge slug, Gd slug, Mo slug, Mn slug, Mgo slug, W slug(not working), Tb slug, Yb slug, Ni slug, NiFe slug,si,a-si | PN2 |
| Dielectric - sputter System | Glass, Si, Ge, Sapphire, Quartz, GaN | ppr, su8, PMMA, gold, Cu & other metals | oxygen & Argon And Nitrogen |
| Gold Electroplating System | |||
| Parylene CVD – SCS | |||
| Thermal Evaporator - Al | Glass, Silicon, Polymer, glass, qurtz, Ge | Any material (including photoresists) that will not evaporate up to 100 C | Liquid Nitrogen |
| Thermal Evaporator-Cr/Au | FTO Glass,Quartz , Silicon, Polymer, GaAs, | Polymer, Any material that can withstand 100degC,Glass substrate is not allowed | |
| HRXRD | Si, Ge, Glass, Sapphire, GaAs, GaN, STO | Only thin films | N.A |
| Tube Washer | NA | Quartz furnace tube | NA |
| Tool Name | Substrate allowed | Materials allowed | Gases allowed |
|---|---|---|---|
| Multi-pocket Electron-beam Evaporator (4 target - GaN) | Only semiconducting substrates are allowed. No glass. | Ti/ Al/ Ni/ Au | PN2 for venting |
| STSRIE | Si, Ge, GeSn, Diamond | SiO2, Si, Ge, Photoresists, HfO2, Al2O3, TiO2, NbN, Pt | SF6, CF4, CHF3, O2, N2 |
| Double Side Mask Aligner – MJB6 | PN2, GN2 | ||
| Karl Suss MJB4 Mask Aligner | Si,GaN, GaAs, Ge | sio2,si | Nitrogen |
| Laser Writer | Iron oxide mask plates/ Si wafer | Iron oxide mask plates/ Si wafer | NA |
| Microwriter ML 3 | |||
| Spinner 2 inch (General Purpose) | Glass, Si, Quartz, GaN, G aAs | PPR, SU8, CBlack, SO D(B and P), HMDS, P3HT, PVD F, PDMS | NA |
| Spinner 2 inch (SU8 PPR) | 2 | SU8, PPR, P3HT | NA |
| Wet bench_Developing station | Glasswares, Solvents. | PN2 | |
| Probe Sonicator | all that needs to mixed to form a uniform solution | NA | NA |
| Tool Name | Substrate allowed | Materials allowed | Gases allowed |
|---|---|---|---|
| Hot wire CVD(HWCVD) | Si, Glass, Quartz | SiNx, SiO2, Materials allowed at low substrate temp- SU8, Au, Al, Cu | SiH4, NH3, N2, H2, B2H6 |
| Organic Evaporation System | Si, Polymer, Glass | Dibromobianthryl(DBBA), Calixerene, Porphyrin, Pthalocyanine, DiketoPyrroloPyrole(DPP), MoO3, DBBR, Leadchloride, methyl ammonium iodide, Tris(8-hydroxyquinolinato)aluminium (Alq3), Rubrene, Pentacene, BODPP, Indigo. Possibility of trying out deposting new polymers soluble in Acetone/ IPA/ Methanol/ Chloroform/ Toluene. TPD, CBP, NPD, TPBi, BCP polymer with MoO3 | N2 |
| 4 probe Measurement (Automatic) | Any substrate (material should not be sticky and should adhere to the substrate) | Sticky and soft samples are not allowed, Samples containing Na, K may require permission | NA |
| 4 Probe Measurement (Manual) | Any substrate (material should not be sticky and should adhere to the substrate) | Sticky and soft samples are not allowed, Samples containing Na, K may require permission | NA |
| DektakXT Profilometer | Si, Ge, Glass, Sapphire | No sticky and soft sample allowed. Density should be greater than 1.001g/cm3 | NA |
| Filmetrics Reflectometer | Any | All | NA |
| Photoluminescence Measurement set up (PL Set up) | GaAs | Solid semiconductor samples with emission wavelength of 700-1400nm | Not allowed |
| X-ray Photoelectron Spectroscopy | Thin film and powdered samples | NA | |
| Plasma Immersion Ion Implantation (PIII) | Si, Ge | SiO2, SiNx, a-Si, Si, SiGe, Ge, Ni, Co, Pt, Al, Hf, Ta, Mo, W, Ti, Cr, Zr, Pd | B2H6, PH3 |
| Tool Name | Substrate allowed | Materials allowed | Gases allowed |
|---|---|---|---|
| ALD | Silicon, Germanium, III-V substrates | NA | Nitrogen, Oxygen, Argon, Ammonia |
| ALD LL | Silicon, Germanium | NA | Nitrogen, Oxygen, Argon, Ammonia |
| Inductively coupled plasma CVD (ICPCVD) | Si/ Ge/ GaN/ Quartz/ GaA s | Si, TiN, ZnO, GaN, GaAs, Al | GN2, PN2, Ar, N2O, SiH4, NH3, H2, He, CF4/ O2 for cleaning |
| Rapid Thermal Processing_Nano lab_General | Silicon, GaAs, GaN, Sapphire, Germanium | NA | Nitrogen, Oxygen, Argon, FGA |
| Sputter (ATC 2200) | Si, Ge | Si, Ge | Ar, N2 |
| Sputter (Orion) | Si, Ge, GaN,GaAs,LSMO,PCMO,YIG,SRO, (No Glass),Lithium Niobate | Photoresist, ebeam resist, Nb, NbN, Yb, Sn, Ge, Pt, Au, Gd, IrMn, Cr, YIG, Fe, Ni, Ta, Cu, Ru, Cr, MgO, Al2O3, SnGe alloy, Ti, CoFeB, SiO2, Al, Co, W, Ag, NiFe | Ar, N2, CDA |
| Ultech Furnace Anneal | Si | SiO2, SiNx | Argon, Nitrogen |
| Ultech Furnace Drive In | Si | Si/ SiO2, Si | Oxygen, Nitrogen |
| Ultech Furnace Dry Oxide | Si | Si | Oxygen, Nitrogen, |
| Ultech Furnace i-poly | Si | Si/ SiO2, Si | SiH4, N2 |
| Ultech Furnace Low Temperature Oxide (LTO) | Si, Ge | Si/ SiO2, Ge/ GeO2 | Argon, Nitrogen |
| Ultech Furnace n-doped poly | Si | Si, Si/ SiO2 | PH3, SiH4, N2 |
| Ultech Furnace Pyrogenic Oxide | Si RCA cleaned wafer | Si, Si/ SiO2 | Oxygen, Hydrogen, Nitrogen |
| Ultech Furnace Silicon Nitride (SiN) | Si | Si, Si/ SiO2 | Silane, Ammonia, Nitrogen |
| Ultech Furnace Silicon Oxynitride (SiON) | Si Wafer | Only 4 inch RCA Cleaned Si wafers | N2O, Oxygen, Nitrogen |
| Olympus Microscope_Nano Lab | Any | Any | NA |
| Sentech Ellipsometer | Si | Dielectrics and Polymers | NA |
| Nano Wet Bench | Silicon,quartz,Ge | Nitrogen for drying |
| Tool Name | Substrate allowed | Materials allowed | Gases allowed |
|---|---|---|---|
| Temperature Dependent Spectral Response Measurement system - PL set up | III-V compound semiconductors | III-V (Any material that may outgass at liquid helium temperatures are not allowed.) | NA |
| Transient Absorption Pump Probe Spectrometer | III-V compound semiconductors | III-V comound semiconductors (GaN, InGAN, AlGaN...AlGaAs) | No gases required |
| Tool Name | Substrate allowed | Materials allowed | Gases allowed |
|---|---|---|---|
| Double Sided Aligner (DSA) | Si, Ge, GaAs, GaN | All that are allowed in the Nanolab | NA |
| RaithEBL_Long | Si, III-V, Glass, Sapphire, Quartz, fused silica | All Materials allowed. Powdered material avoided Powdered materials considered only on case by case basis | N2 |
| RaithEBL_Short | Si, III-V, Glass, Sapphire, Quartz, fused silica | All Materials allowed. Powdered material avoided Powdered materials considered only on case by case basis | N2 |
| Spin Coater – Laurell | Photoresists | NA | |
| Spinner 2 inch (PPR) | Si, Glass, GaAs | positive and negative photoresist as well as EBL resist, HMDS | N2 |
| Spinner 4 inch (PMMA) | all | All that is allowed in NYR | N2 |
| Spinner 8 inch (General Purpose) | Si, Glass, GaAs | positive and negative photoresist as well as EBL resist, HMDS | N2 |
| Torrey Pines Scientific Hi-temp Hotplate | Si, III-V, Glass, Sapphire, Quartz, fused silica | All that is allowed in NYR | NA |
| Torrey Pines Scientific Low-temp Hotplate | Si, III-V, Glass, Sapphire, Quartz, fused silica | All that is allowed in NYR | NA |
| Tool Name | Substrate allowed | Materials allowed | Gases allowed |
|---|---|---|---|
| AJA 6 Target E beam Evaporator | Si, Ge, GaN, Quartz,Diamond | Photoresists | N2, CDA |
| Laser 1_3 | |||
| Laser 2_4 | |||
| Plasma Doping System | Si, Ge, C, Sn | only Group IV (Si, Ge, C, Sn) allowed. | PH3, B2H6, Ar, CHF3 , SiH4, O2, N2 |
| PLD I | Si/ Ge/ GaN/ Quartz/ GaAs, sapphire | Si, Ge, GaN, Quartz, GaAs, ZnO, MgO, ZnMgO, BaTiO3, SrBi2Ta2O9, PCMO, ZFO, CFO, In2O3, Ga2O3, NiO, BN, BaBiO3 | Oxygen, Nitrogen |
| PLD II | Si/ Ge/ GaN/ Quartz/ GaA s/ STO/ LAO/ MgO | BFO/ BDFO/ LSMO/ PCMO/ PZT/ MgO/ STO/ PTFO/ PTS/ SRO / LiFePO4 / LiCoO2/ Co2MnSi | Oxgen |
| PLD III | Si, Ge, GaN | Gd2O3, HfO2, La2O3, LaAlO2, GdScO2, Re2O3, Sc2O3, ZrO2, PCMO (All are of 4N purity) | N2, Ar, O2 (At least 4N purity) |
| PLD IV | Si, Ge, Sapphire | BDFO | Ar, O2, N2 |
| Rapid Thermal Processing GaN (RTP GaN) | GaAs, GaN, Sapphire | GaN, GaAs, AlGaN | Nitrogen, Oxygen, Argon, H2 |
| Rapid Thermal Processing Group IV (RTP Grp-IV) | Only Si, Ge, and Diamond substrates are allowed. | SiO2, Gd2O3, ZrO2, HfO2, HZO, Al2O3 | Ar, O2, N2, FGA, N2O |
| Ambios XP-2 Profilometer | Si, Glass, Sapphire | No sticky and soft samples allowed,PEDOT | NA |
| DektakXT Profilometer_1.1 Lab | Si, Ge, Glass, Sapphire | No sticky and soft sample allowed. Density should be greater than 1.001g/cm3 | NA |
| Ar-ion Milling | Any substrate | All | Ar |
| ICPRIE (New) | GaAs/ GaN | GaAs/ GaN | BCl3, Cl2, Ar, O2, SF6 |
| ICPRIE (old) | GaAs/ GaN | GaAs/ GaN | BCl3, Cl2 , Ar, O2 |
| Plasma asher | Quartz, Si | ppr, su8, cblack, PDMS, PMMA, metals, oxides, Polymer(VDF-TrFe0/ BaTiO3 | Oxygen, CF4, CHF3 |
| 1.2 Lab wet bench | Silicon,quartz,Ge, GaN | IPA, Acetone, BHF 2%HF and HCL | Nitrogen for drying |
| Tool Name | Substrate allowed | Materials allowed | Gases allowed |
|---|---|---|---|
| DI Water Plant | |||
| LPCVD Furnace_PolySi Doped PolySi | |||
| LPCVD Furnace_SixNy | |||
| LPCVD Furnace_Thermal oxidation | |||
| Multi target sputter – AJA International | Si, Ge, GaN,GaAs,LSMO,PCMO,YIG,SRO, (No Glass) | O2, Ar, PN2 | |
| Rapid Thermal Process_NMPF Lab_General | |||
| Deep Reactive Ion Etching – Samco | Si, diamond | Photoresist, SiO2, SiN, EBL resist. | SF6, C4F8, O2, Ar, PN2, GN2 |
| RIE-1C Plasma Etcher– Samco | CF4, O2, PN2 | ||
| NMPF Wetbench_2 inch RCA Piranha | Si, Quartz, Diamond, Sapphire | PN2 | |
| Wet bench_Metal etching | NA | Metal etchants, glassware | PN2 |
| Wafer Dicer – ADT |
| Tool Name | Substrate allowed | Materials allowed | Gases allowed |
|---|---|---|---|
| Magnetoresistance Setup | |||
| RF Cryogenic Device Characterization system | Si, Ge, SiC, Al2O3 | NA | NA |
| Tool Name | Substrate allowed | Materials allowed | Gases allowed |
|---|---|---|---|
| Magneto Optic Kerr Effect (MOKE) | |||
| Magnetoresistance Setup with Vector Network Anlyser (VNA) and Rotating stage |
| Tool Name | Substrate allowed | Materials allowed | Gases allowed |
|---|---|---|---|
| 2D Materials CVD | Si, Quartz, Sapphire | Molybdenum, tungsten, sulphur - powders | N2, AR |
| Phoenix | Si/ Ge/ Metal and Materials that don't vaporize at Room Temp. | Si/ Ge/ Metal and Materials that don't vaporize at Room Temp. | N.A. |
| LabRAM HR Evolution-RAMAN | Si | No liquid or powder samples | NA |
| Optical Setup (micro-PL) | Si | ||
| 2-arm Glove Box | Any | Any except water and oxygen., Water, acids are not allowed. Any use which leads to increase in moisture and oxygen level above 25 ppm are restricted. Use of chemicals are subject to mutual compatibility. | N2, Ar, He |
| Wire bonder (TPT HB05)_Gold | Si/Metal | Gold wire bonds | NA |
| Tool Name | Substrate allowed | Materials allowed | Gases allowed |
|---|---|---|---|
| PPMS - Integrated cryogen-free system | Any semiconductor material, Usually thin solid film or devices made on thin solid films are allowed except any substrate in powder or liquid form. | Any semiconductor, thin solid film or devices made on thin solid films except anything that is in liquid or powder form. Metal contacts on semiconductor materials are allowed. | No gases are allowed |
| Tool Name | Substrate allowed | Materials allowed | Gases allowed |
|---|---|---|---|
| MFP-3D-AFM | All thin film substrates are allowed | ||
| Wafer bonder | Si, Glass | SiO2, SiNx, a-Si | NA |
| Tool Name | Substrate allowed | Materials allowed | Gases allowed |
|---|---|---|---|
| FPA (Focal Plane Array) Characterization set up | GaAs/ III-V compounds | III-V materials | NA |
| Hall Measurement System | Any | Any, In | NA |
| Spectral Response-single pixel characterisation | GaAs/ III-V compounds | III-V materials | Nitrogen |
| Karl Suss MJB3 Mask Aligner | Si, GaN | sio2, Si | N2 gas |
| Wire Bonder_Hybond | Si/ III-V | Ti/ Al/ Ni/ Pt/ Au/ Cr etc | N/A |
| Tool Name | Substrate allowed | Materials allowed | Gases allowed |
|---|---|---|---|
| Eppendorf FemtoJet 4x Microinjector | |||
| Potentiostat | NA | Batteries, Photovoltaic Panels, Fuel cells and other electrochemical cells. Max. Cell power is 10 W | NA |
| Contact Angle Instrument (GBX) | Non contact measurement | All materials are allowed (Na+ and K+ samples are not allowed) | NA |
| Fluorescence Microscope (Z1) | No substrate restriction. But maximum thickness of sample varies according to the magnification (eg for 100X, max thickness alowed is 4mm). | NA | NA |
| FTIR | Si/ Glass | Except hazardous materials like Lead and materials which contaminate other samples are not allowed, all organic, inorganic materials deposited on Si. Powder samples are not allowed | NA |
| UV-Vis-NIR Spectrometer - Lambda 750 | Si, Ge, Glass | Solid film/ liquids provided it does not contain toxic or hard to clean chemicals. | NA |
| Laser Engraving System (LES) | System is made for engraving not for cutting. Sample allowed : Paper, Cardboard, Silicon, Glass, Polymers such as Acrylic sheets, Polycarbonate sheets, PDMS sheets, Steel, Aluminium | Materials allowed is same as substrate allowed. However, materials/ substrates that generate excessive toxic fumes on exposure to laser are to be restricted as the exhaust has not been installed yet. | NA |
| Owlstone Vapour Generator (OVG-4) |  | N2 |
| Tool Name | Substrate allowed | Materials allowed | Gases allowed |
|---|---|---|---|
| Olympus Microscope_2_Wet Chemistry Lab | Si/ Glass: NA | NA | |
| 2 inch RCA Clean Station | Silicon wafers only | Only Si wafers, and Quartz glass | NA |
| 4 inch RCA Clean Station | Si | Only RCA chemicals and DI water | PN2 for drying |
| General Purpose Wet Bench (Wet Chemistry Lab) | Miscellaneous | Everything other than Sodium and Pottasium | N2 gas |
| Piranha Cleaning | Silicon wafers only | Only Si wafers, and Quartz glass | NA |
| TMAH wet etch station | All | All materials, gold lift off | |
| Scientific India Microscope | NA | NA | NA |
| Tool Name | Substrate allowed | Materials allowed | Gases allowed |
|---|---|---|---|
| 2 inch general purpose annealing furnace_Fume hood 3 | Any | N2, Ar, He | |
| Atmospheric Furnace_7.1 Lab | Glass, Quartz, All kinds of semiconductor wafer | Inorganic and Organic Materials | N2, O2 |
| Dip Coater | Any | Any | NA |
| Drying Oven_7.1 Lab | Glasswares | NA | |
| Fume Hood 4 | |||
| Hot plate with stirrer (1)_Fume Hood 1 | |||
| Hot plate with stirrer (2)_Fume Hood 1 | |||
| Hot plate with stirrer (3)_2 arm glove box | |||
| Hot plate with stirrer (4)_4-arm glove box | |||
| Hydrothermal Reactor_Fume Hood 2 | |||
| pH Meter | NA | ||
| Schlenk Line (2)_Fume Hood 3 | NA | Any | N2, Ar |
| SILAR controller | NA | ||
| Spin Coater_4 arm glove box | N2, O2 | ||
| Thermogravimetric Analyzer | |||
| Tube Furnace_Fume hood 5 | Glass, Quartz, All kinds of semiconductor wafers | Organic, Inorganic, Metal-organic | N2, O2, Ar |
| Contact Angle System (Data Physics) | Any | Any | NA |
| FTIR Spectrometer (Spectrum 65) | Si and IR transparent substrate | Any | NA |
| Leica Microscope | Any | Any | NA |
| UV-Vis-Spectrometer - Lambda 25 (7.1 Lab) | Si/Quartz | IS IT a solid state or solution state machine? It is solution state machine | NA |
| 4-arm glove box_7.1 lab | Any | Water, acids are not allowed. Any use which leads to increase in moisture and oxygen level above 25 ppm are restricted. Use of chemicals are subject to mutual compatibility. | N2, Ar, He |
| Schlenk Line (1)_Fume Hood 1 | NA | Any | N2, Ar |
| Barn-stead Lab-line Oven | Si, III-V, Glass, Sapphire, Quartz,fused silica, PDMS | All that is allowed in NYR | N2 |
| Ultrasonicator_Fume Hood 1 | NA | ||
| UV-Ozone Cleaner_7.1 Lab | Any | Any | O2, N2 |
| Tool Name | Substrate allowed | Materials allowed | Gases allowed |
|---|---|---|---|
| Aries(Temperature Dependent IV/CV) | NA | ||
| Cryogenic probe station | Si, Ge, III-V | Si, Ge, III-V and 2D materials | N2 |
| Polaris (Stress/Long Time Measurements) | Si/ Ge/ Metal and Materials that don't vaporize at Room Temp. | Si/ Ge/ Metal and Materials that don't vaporize at Room Temp. | N.A. |
| Proxima (Fast IV Measurement/ B1500) | Si/ Ge/ Metal and Materials that don't vaporize at Room Temp. | Si/ Ge/ Metal and Materials that don't vaporize at Room Temp. | NA |
| RIGEL (Keysight B1500) | Si/ Ge/ Metal and Materials that don't vaporize at Room Temp. | Si/ Ge/ Metal and Materials that don't vaporize at Room Temp. | NA |
| Sirius (NBTI Setup) | Si/ Ge/ Metal and Materials that don't vaporize at Room Temp. | Si/ Ge/ Metal and Materials that don't vaporize at Room Temp. | N.A. |
