This is a relatively new focus area at IITBNF, covering research on III-V compound semiconductors for high-speed communication and high-power applications. Our research in this area has seen a steady growth since 2007 with the addition of new faculty and millions of dollars’ worth internal and external funding for dedicated facilities such as molecular beam epitaxy (MBE) for the growth of high-quality III-V films. Combined with our existing range of computational, process and metrology equipment, IITBNF now possesses state-of-the-art facilities for simulation, characterization and fabrication of III-V compound semiconductor based high-speed switches and optoelectronic devices. A gallium nitride (GaN) based high electron mobility transistor (HEMT) was first successfully fabricated in India in 2009 at our very own facility.
Some of our active research topics include:
|Growth & characterization of III-V materials and their heterostructures|
|Modeling, fabrication & characterization of III-N HEMT and related structures for high-speed, high-power applications|
|Physics & modeling of III-N materials and their heterostructures|
|Modeling, fabrication & characterization of novel light sources – III-N LEDs, quantum dot LEDs/ lasers, single-photon sources, etc.|
|Spin-based optoelectronics – spin-polarized light sources for sensor and optical communication applications|
|Magnetic semiconductor materials for spin-based optoelectronics|