IIT-B startup builds India's most efficient solar cell with 29.8% conversion; “Game-changer” for India, says Pralhad Joshi
Pralhad Joshi said that new solar cell technology developed at IIT-B is a “gamechanger” and urged industry players to invest in scaling up the project. Read more..
7^th January 2025 at 2.00 PM to 3:30 PM
Department of Electrical Engineering, IIT Bombay in association with The Centre for Semiconductor Technologies (SemiX), IIT Bombay
Read more..

VENUE: GG301, Seminar Room, 3rd Floor, GG Building, EE Department, IIT Bombay on Tuesday, 7^th January 2025 at 2.00 PM to 3:30 PM

TITLE: Role of Advanced Film Deposition Technology to Enable the Future of Patterning
INUP Users' Meet
Celebrating the Journey of Innovation and Collaboration
On 10^th August, 2024 (Saturday)

Please click here to give your valuable feedback on INUP program.
Nitupon Dihingia awarded the 'Best Poster Award' at the 'IEEE EDTM Conference 2024' held in Bengaluru for the work 'Solution-processed Forming-free ALPO - RRAM based Artificial Synaptic Device with 3 orders of Conductance – Modulation'.
Read more..
7^th March, 2024 at 2.00 PM
The Center for Semiconductor Technologies at IIT Bombay is organizing a talk by Professor Martin Kuball, Royal Academy of Engineering Chair in Emerging Technologies at the University of Bristol and Fellow of IEEE, MRS, SPIE, IET and IoP.
VENUE: Seminar Room - 301, 3rd Floor, GG Building, EE department, on 7^th March, 2024 at 2:00 PM

TITLE: Wide/Ultrawide Bandgap Next Generation RF and Power Devices.
All are Welcome!!
IIT Bombay, 15^th Dec 2022
Md. Hanif Ali receives best paper award at IEEE - ICEE 2022, flagship devices conference in Bangalore.
The title of the paper is "Enhanced Remnant Polarization (>70 µC/cm2 ) Read more..
IIT Bombay, 11^th July 2022
The World's First Quantum Tunneling Enabled Spiking Neural Network Chip on 45nm SOI Technology from India
a device-circuit-algorithm co-design team was formed led by Prof. Udayan Ganguly and Prof. Maryam Shojaei Baghini at IIT Bombay. Together, the team has designed the global first spiking neuro-synaptic core on 45nm SOI technology enabled by quantum tunneling.
IIT Bombay, 16^th June 2022
India’s First Commercial Sub-15um Intra-Cortical Neural Microelectrodes Fabricated at IIT Bombay Nanofabrication Facility
IIT Bombay, 29^th May 2022
The World's First Spiking Neural Network Chip on 45nm SOI Technology from India
"A device-circuit-algorithm co-design team was formed led by Prof. Udayan Ganguly and Prof. Maryam Shojaei Baghini at IIT Bombay. Together, the team has designed the global first spiking neuro-synaptic core on 45nm SOI technology."
PIB Delhi, 17^th Aug 2021
Indigenous memory technology adoption for 180 nm CMOS production: A national milestone in semiconductor R&D
A tiny memory to make chips "perfect" Rajul Patkar started thinking about low cost sensors for agriculture when she registered for PhD seven years ago at IIT Bombay.Rajul Patkar started thinking about low cost sensors for agriculture when she registered for PhD seven years ago at IIT Bombay.Rajul Patkar started thinking about low cost sensors for agriculture when she registered for PhD seven years ago at IIT Bombay.
IN THE NEWS
Team of IITBNF Electrical Engineering students, won GYTI’s SRISTI social technological Award, for developing a micro-cantilever based eNose System for chemical vapor sensing.
IN THE NEWS
'IITBNF student bags Weikfield Malhotra foundation award for his excellence in NanoScience' Naveen Kaushik, Ph.D student, IITBNF, EE Dept. bags Weikfield Malhotra foundation award 2016 for his work in the area of NanoScience.
IN THE NEWS
A new idea on nano-oscillators driven by electron spin by Prof. B. Muralidharan and Prof. A. Tulapurkar was covered as a feature on the IITB website.

List of Wafers/ Mask plates

#	Material	Size	P/N	Orientation	Resistivity (Ω-cm)	Surface
1	Si	2 Inch	N	<100>	0.1--0.2	SSP
2	Si	2 Inch	N	<100>	0.01--0.02	SSP
3	Si	2 Inch	N	<100>	1--5	SSP
4	Si	2 Inch	N	<100>	4--7	SSP
5	Si	2 Inch	N	<100>	4--7	DSP
6	Si	2 Inch	N	<110>	4--7	SSP
7	Si	2 Inch	N	<100>	1--10	SSP
8	Si	2 Inch	N	<100>	40--100	DSP
9	Si	2 Inch	N	<100>	<0.005	SSP
10	Si	2 Inch	N	<100>	10--30	SSP
11	Si	2 Inch	N	<100>	0.05--4	DSP
12	Si	2 Inch	N	<100>	0.01	SSP
13	Si	2 Inch	P	<100>	0.01--0.1	SSP
14	Si	2 Inch	P	<100>	0.1--0.2	SSP
15	Si	2 Inch	P	<100>	0.1--0.6	SSP
16	Si	2 Inch	P	<100>	0.01--0.02	SSP
17	Si	2 Inch	P	<100>	0.001--0.002	SSP
18	Si	2 Inch	P	<100>	0.001--0.004	SSP
19	Si	2 Inch	P	<100>	0.001--0.005	SSP
20	Si	2 Inch	P	<100>	0.0005--0.001	SSP
21	Si	2 Inch	P	<100>	<0.005	SSP
22	Si	2 Inch	P	<110>	1--5	DSP
23	Si	2 Inch	P	<100>	1--10	SSP
24	Si	2 Inch	P	<100>	4--7	DSP
25	Si	2 Inch	P	<100>	4--7	SSP
26	Si	2 Inch	P	<110>	4--7	DSP
27	Si	2 Inch	P	<100>	10--30	SSP
28	Si	2 Inch	P	<100>	40--100	DSP
29	Si	2 Inch	P	<111>	0.1--0.6	SSP
30	Si	2 Inch	P	<100>	1--5	SSP
31	Si	2 Inch	P	<100>	>1000	SSP
32	Si	2 Inch	P	<111>	>1000	SSP
33	Si	4 Inch	P	<100>	0.02--0.04	SSP
34	Si	4 Inch	P	<100>	1--5	SSP
35	Si	4 Inch	P	<100>	4--7	SSP
36	Si	4 Inch	P	<100>	>1000	SSP
37	Si	4 Inch	P	<100>	1--10	DSP
38	Si	4 Inch	P	<100>	0.01--0.02	SSP
39	Si	4 Inch	P	<100>	0.1--0.2	SSP
40	Si	4 Inch	N	<100>	1--5	SSP
41	Si	4 Inch	N	<100>	1--10	SSP
42	Si	8 Inch	NONE	<100>	1--80	SSP
43	Si	2 Inch	N	<100>	0.1--0.02	SSP
44	Si	2 Inch	P	<100>	0.5--4	DSP
45	Si	2 Inch	P	<100>	0.0005--0.0001	SSP
46	Si	2 Inch	P	<100>	>100	DSP
47	Si	2 Inch	P	<111>	4--6	SSP(Dopant)
48	Si	4 Inch	N	<100>	10000--99999	SSP
49	Si	4 Inch	P	<100>	10000--99999	SSP
50	Si	2 Inch	P	<100>	>30K	DSP
51	Si	4 Inch	N	<111>	>30K	SSP
52	Si	4 Inch	P	<111>	>30K	SSP
53	Si	4 Inch	P	<100>	<0.01	SSP
54	Si	2 Inch	P	<110>	4--7	SSP
55	Si	2 Inch	N	<110>	>1000	SSP
56	Si	4 Inch	P	<111>	0.001--0.005	SSP
57	Si	2 Inch	N	<111>	>1000	SSP
58	Si	2 Inch	N	<100>	>1000	SSP
59	Si	4 Inch	P	<100>	0.001--0.005	SSP
60	Si	4 Inch	N	<111>	0.001--0.005	SSP
61	Si	4 Inch	P	<100>	0.001--0.1	SSP
62	Si	8 Inch	P	<100>	1--80	SSP
63	Quartz	4 Inch	NONE	NONE	C-Shaped	DSP
64	Ge	2 Inch	N	<100>	1--10	SSP
65	Si	4 Inch	P	<111>	1--10	SSP
66	Si	4 Inch	P	<111>	10--20	SSP
67	Si	3 Inch	P	<100>	1--10	SSP
68	Si	3 Inch	P	<111>	1--10	SSP
69	Si	2 Inch	N	<100>	10--20	SSP
70	Mask Plate	3 Inch	Iron Oxide	NONE	NONE	NONE
71	Mask Plate	5 Inch	Iron Oxide	NONE	NONE	NONE
72	Si	2 Inch	N	<100>	40--100	SSP
73	Si	2 Inch	N	<100>	<0.01	SSP
74	Si	4 Inch	N	<100>	<0.005	SSP
75	Si	2 Inch	P	<100>	0.5--4	SSP
76	Glass	4 Inch	NONE	NONE	NONE	NONE
77	Si	4 Inch	P	<100>	<0.005	SSP
78	Si	2 Inch	N	<100>	0.001--0.005	SSP
79	Si	4 Inch	N	<100>	4--7	SSP
80	Si	4 Inch	P	<100>	4--7	DSP
81	Quartz	2 Inch	NONE	NONE	NONE	DSP
82	Si	2 Inch	N	<100>	0.001--0.002	SSP
83	Si	2 Inch	P	<100>	>10000	SSP
84	Si	2 Inch	P	<111>	0.0005--0.001	SSP
85	SOI	4 Inch	P	<100>	>10000	NONE
86	Si Fz (100 µm)	4 Inch	Intrinsic/ Undoped	<100>	10000--20000	SSP
87	Si	2 Inch	N	<111>	0.001--0.01	SSP
88	Si	2 Inch	N	<100>	>10000	SSP
89	Si	2 Inch	P	<100>	4--7	SSP
90	Si	4 Inch	P	<100>	1--10	SSP
91	Si	4 Inch	N	<100>	0.001--0.002	SSP
92	Si	2 Inch	N	<100>	0.001--0.005	SSP
93	Si	2 Inch	P	<100>	>20K	SSP
94	Si	4 Inch	Intrinsic	<100>	>10000	SSP

***Non-CEN Project specific wafers

#	Material	Size	P/N	Orientation	Resistivity (Ω-cm)	Surface	PL
1	Ge	2''	P	<100>	1 - 10	SSP	S.Lodha
2	Ge	2''	P	<110>	1 - 10	SSP	S.Lodha
3	Ge	2''	P	<111>	1 - 10	SSP	S.Lodha
4	Ge	2''	P	<100>	0.01 - 0.1	SSP	S.Lodha
5	Ge	2''	P	<111>	0.02 - 0.1	SSP	S.Lodha
6	Ge	2''	N	<100>	1 - 10	SSP	S.Lodha
7	Ge	2''	N	<100>	0.01 - 0.1	SSP	S.Lodha
8	Ge	2''	N	<100>	0.001 - 0.01	SSP	S.Lodha

Information about thickness of Wafers/Mask plates

Thickness of 2" Si wafers: 275 +/- 25 um
Thickness of 4" Si wafers: 525 +/- 20 um
Thickness of 4" Quartz wafers: -- 500 +/- 20 um
Thickness of 3" mask plates: 3 x 3 x 0.060"
Thickness of 5" mask plates: 5 x 5 x 0.060"

List of Wafers/ Mask plates

List of Wafers/ Mask plates

***Non-CEN Project specific wafers

Information about thickness of Wafers/Mask plates

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