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| Tool Name | Type of Tool | Location | Category | Substrate Allowed | Materials Allowed | Gases Allowed |
|---|---|---|---|---|---|---|
| Inductively coupled plasma CVD (ICPCVD) | Deposition, Growth and Annealing systems | Nano Lab | semi clean b | Si/ Ge/ GaN/ Quartz/ GaA s | Si, TiN, ZnO, GaN, GaAs, Al | GN2, PN2, Ar, N2O, SiH4, NH3, H2, He, CF4/ O2 for cleaning |
| Olympus Microscope_Nano Lab | Material and structural characterization | Nano Lab | in line ac | Any | Any | NA |
| Double Sided Aligner (DSA) | Lithography | Nano Litho Lab | litho/analytical | Si, Ge, GaAs, GaN | All that are allowed in the Nanolab | NA |
| RaithEBL_Short (max 3 hr slot) | Lithography | Nano Litho Lab | litho/analytical | Si, III-V, Glass, Sapphire, Quartz, fused silica | All Materials allowed. Powdered material avoided Powdered materials considered only on case by case basis | N2 |
| Rapid Thermal Processing_Nano lab_General | Deposition, Growth and Annealing systems | Nano Lab | gold contaminated | Silicon, GaAs, GaN, Sapphire, Germanium | NA | Nitrogen, Oxygen, Argon, FGA |
| ICPRIE GaN Old | Reactive Ion Etch | Nanoelectronics Processing Lab (NanoE bldg, 1st floor) | clean | GaAs/ GaN | GaAs/ GaN | BCl3, Cl2 , Ar, O2 |
| Plasma Immersion Ion Implantation (PIII) | Miscellaneous | Micro2 Lab | semi clean b | Si, Ge | SiO2, SiNx, a-Si, Si, SiGe, Ge, Ni, Co, Pt, Al, Hf, Ta, Mo, W, Ti, Cr, Zr, Pd | B2H6, PH3 |
| Rapid Thermal Processing Group IV (RTP Grp-IV) | Deposition, Growth and Annealing systems | Nanoelectronics Processing Lab (NanoE bldg, 1st floor) | semi clean b | Only Si, Ge, and Diamond substrates are allowed. | SiO2, Gd2O3, ZrO2, HfO2, HZO, Al2O3 | Ar, O2, N2, FGA, N2O |
| 2 inch Dry oxidation Furnace | Deposition, Growth and Annealing systems | Micro1 Lab | clean | Si Wafer with RCA cleaning | only silicon wafers (others under contamination clearance) | N2, O2 |
| 2 inch Wet oxidation Furnace | Deposition, Growth and Annealing systems | Micro1 Lab | clean | Si Wafer with RCA cleaning or piranha cleaning | only silicon wafers (others under contamination clearance) | N2, O2, H2 |
| 2 inch N2 Annealing Furnace | Deposition, Growth and Annealing systems | Micro1 Lab | clean | Silicon/ Glass | Si/ SiO2/ Si3N4 | N2 |
| 4 target E-beam evaporator | Deposition, Growth and Annealing systems | EC Lab | gold contaminated | Quartz, Silicon, Polymer, GaN | Zn slug, Cr slug, Ag slug, Ta slug, Fe slug, Au slug, Pt slug(not working), AuGe slug, Co slug, Cu slug, Ti slug, Al slug, Mg slug, Pd slug, Ge slug, Gd slug, Mo slug, Mn slug, Mgo slug, W slug(not working), Tb slug, Yb slug, Ni slug, NiFe slug,si,a-si | PN2 |
| Microwriter ML 3 | Lithography | Nano Litho Lab | litho/analytical | Silicon, Quartz, Sapphire, GaN | Photo Resist | N2 |
| FTIR | Material and structural characterization | EC Lab | litho/analytical | Si/ Glass | Except hazardous materials like Lead and materials which contaminate other samples are not allowed, all organic, inorganic materials deposited on Si. Powder samples are not allowed | NA |
| Plasma asher | Reactive Ion Etch | Nanoelectronics Processing Lab (NanoE bldg, 1st floor) | gold contaminated | Quartz, Si | ppr, su8, cblack, PDMS, PMMA, metals, oxides, Polymer(VDF-TrFe0/ BaTiO3 | Oxygen, CF4, CHF3 |
| Thermal Evaporator - Al | Deposition, Growth and Annealing systems | EC Lab | gold contaminated | Glass, Silicon, Polymer, glass, qurtz, Ge | Any material (including photoresists) that will not evaporate up to 100 C | Liquid Nitrogen |
| Thermal Evaporator-Cr/Au | Deposition, Growth and Annealing systems | EC Lab | gold contaminated | FTO Glass,Quartz , Silicon, Polymer, GaAs, | Polymer, Any material that can withstand 100degC,Glass substrate is not allowed | |
| Laser Writer | Lithography | Nanoelectronics Processing Lab (NanoE bldg, 1st floor) | litho/analytical | Iron oxide mask plates/ Si wafer | Iron oxide mask plates/ Si wafer | NA |
| STSRIE | Reactive Ion Etch | Micro2 Lab | semi clean a | Si, Ge, GeSn, Diamond | SiO2, Si, Ge, Photoresists, HfO2, Al2O3, TiO2, NbN, Pt | SF6, CF4, CHF3, O2, N2 |
| PLD I | Deposition, Growth and Annealing systems | Nanoelectronics Processing Lab (NanoE bldg, 1st floor) | gold contaminated | Si/ Ge/ GaN/ Quartz/ GaAs, sapphire | Si, Ge, GaN, Quartz, GaAs, ZnO, MgO, ZnMgO, BaTiO3, SrBi2Ta2O9, PCMO, ZFO, CFO, In2O3, Ga2O3, NiO, BN, BaBiO3 | Oxygen, Nitrogen |
| PLD II | Deposition, Growth and Annealing systems | Nanoelectronics Processing Lab (NanoE bldg, 1st floor) | clean | Si/ Ge/ GaN/ Quartz/ GaA s/ STO/ LAO/ MgO | BFO/ BDFO/ LSMO/ PCMO/ PZT/ MgO/ STO/ PTFO/ PTS/ SRO / LiFePO4 / LiCoO2/ Co2MnSi | Oxgen |
| ICPRIE GaN New | Reactive Ion Etch | Nanoelectronics Processing Lab (NanoE bldg, 1st floor) | clean | GaAs/ GaN | GaAs/ GaN | BCl3, Cl2, Ar, O2, SF6 |
| 6 Target E Beam Evaporator | Deposition, Growth and Annealing systems | MBE Clean Room 2 (NanoE bldg, Gr floor) | gold contaminated | Si, Ge, GaAs GaN, Glass, Quartz | Gold, Nickel, Gold-Germanium alloy, Titanium | Nitrogen |
| Spectral Response-single pixel characterisation | Electrical characterization | Applied Quantum Mechanics Lab 3(NanoE bldg, 5th floor) | litho/analytical | GaAs/ III-V compounds | III-V materials | Nitrogen |
| PLD target making furnace | Deposition, Growth and Annealing systems | Micro2 Lab | clean | |||
| FPA (Focal Plane Array) Characterization set up | Electrical characterization | Applied Quantum Mechanics Lab 3(NanoE bldg, 5th floor) | litho/analytical | GaAs/ III-V compounds | III-V materials | NA |
| Dicer | Miscellaneous | MBE Clean Room 2 (NanoE bldg, Gr floor) | gold contaminated | GaAs, Si. | ||
| Electro Plating system (Cu) | Deposition, Growth and Annealing systems | EC Lab | semi-clean pv | Silicon based devices like solar cells | Any testing | NA |
| Flip Chip Bonder | Miscellaneous | MBE Clean Room 2 (NanoE bldg, Gr floor) | gold contaminated | GaAs, Si, Quartz | In, Al, Gold | |
| Hall Measurement System | Electrical characterization | Applied Quantum Mechanics Lab 3(NanoE bldg, 5th floor) | litho/analytical | Any | Any, In | NA |
| Logitech PM5 Precision Lapping and Polishing Machine | Miscellaneous | EC Lab | gold contaminated | III-V materials | III-V materials | N/A |
| Molecular Beam Epitaxy III-V | Deposition, Growth and Annealing systems | MBE Clean Room 1 (NanoE bldg, Gr floor) | clean (III,V compounds) | GaAs | Ga, In, Al, As, Si | PN2, He |
| Polaris (Stress/Long Time Measurements) | Electrical characterization | Device Characterization Lab(DC)(NanoE bldg, 3rd Floor) | litho/analytical | Si/ Ge/ Metal and materials that don't melt or vaporize till 200 deg C. | Si/ Ge/ Metal and materials that don't melt or vaporize till 200 deg C. | N.A. |
| Phoenix | Electrical characterization | Device Characterization Lab(DC)(NanoE bldg, 3rd Floor) | litho/analytical | Si/ Ge/ Metal and Materials that don't vaporize at Room Temp. | Si/ Ge/ Metal and Materials that don't vaporize at Room Temp. | N.A. |
| Proxima (Fast IV Measurement/ B1500) | Electrical characterization | Device Characterization Lab(DC)(NanoE bldg, 3rd Floor) | in line act | Si/ Ge/ Metal and Materials that don't vaporize at Room Temp. | Si/ Ge/ Metal and Materials that don't vaporize at Room Temp. | NA |
| RIGEL (Keysight B1500) | Electrical characterization | Device Characterization Lab(DC)(NanoE bldg, 3rd Floor) | in line act | Si/ Ge/ Metal and Materials that don't vaporize at Room Temp. | Si/ Ge/ Metal and Materials that don't vaporize at Room Temp. | NA |
| Wire Bonder_Hybond | Miscellaneous | Applied Quantum Mechanics Lab 3(NanoE bldg, 5th floor) | gold contaminated | Si/ III-V | Ti/ Al/ Ni/ Pt/ Au/ Cr etc | N/A |
| 2 inch RCA Clean Station | Bonding tools | Wet Chemistry lab | clean (for si) | Silicon wafers only | Only Si wafers, and Quartz glass | NA |
| In Thermal Evaporator | Deposition, Growth and Annealing systems | MBE Clean Room 2 (NanoE bldg, Gr floor) | gold contaminated | Si, Ge, GaAs GaN, Glass, Quartz | Indium only | Nitrogen |
| TMAH wet etch station | Bonding tools | Wet Chemistry lab | gold contaminated | All | All materials, gold lift off | |
| Spinner 2 inch (PPR -AZ) | Lithography | Nano Litho Lab | litho/analytical | 2 | PPR,AZ | NA |
| Spinner 2 inch (General Purpose) | Lithography | Nanoelectronics Processing Lab (NanoE bldg, 1st floor) | litho/analytical | Glass, Si, Quartz, GaN, G aAs | PPR, SU8, CBlack, SO D(B and P), HMDS, P3HT, PVD F, PDMS | NA |
| 4 probe Measurement (Automatic) | Electrical characterization | Micro2 Lab | litho/analytical | Any substrate (material should not be sticky and should adhere to the substrate) | Sticky and soft samples are not allowed, Samples containing Na, K may require permission | NA |
| Spinner 8 inch – General purpose (For DSA) | Lithography | Nano Litho Lab | litho/analytical | Si, Glass, GaAs | positive and negative photoresist as well as EBL resist, HMDS | N2 |
| Spinner 2 inch – PPR (For DSA) | Lithography | Nanoelectronics Processing Lab (NanoE bldg, 1st floor) | litho/analytical | Si, Glass, GaAs | positive and negative photoresist as well as EBL resist, HMDS | N2 |
| Sirius (NBTI Setup) | Electrical characterization | Device Characterization Lab(DC)(NanoE bldg, 3rd Floor) | litho/analytical | Si/ Ge/ Metal and Materials that don't vaporize at Room Temp. | Si/ Ge/ Metal and Materials that don't vaporize at Room Temp. | N.A. |
| Photoluminescence Measurement set up (PL Set up) | Material and structural characterization | Micro2 Lab | litho/analytical | GaAs | Solid semiconductor samples with emission wavelength of 700-1400nm | Not allowed |
| Logitech WSB2 Wafer Substrate Bonding Unit | Miscellaneous | EC Lab | gold contaminated | III-V materials | III-V materials | N/A |
| Filmetrics Reflectometer | Material and structural characterization | Micro2 Lab | litho/analytical | Any | All | NA |
| General Purpose Wet Bench (Wet Chemistry Lab) | Bonding tools | Wet Chemistry lab | gold contaminated | Miscellaneous | Everything other than Sodium and Pottasium | N2 gas |
| 4 inch RCA Clean Station | Bonding tools | Wet Chemistry lab | clean (for si) | Si | Only RCA chemicals and DI water | PN2 for drying |
| DektakXT Profilometer | Material and structural characterization | Micro2 Lab | litho/analytical | Si, Ge, Glass, Sapphire | No sticky and soft sample allowed. Density should be greater than 1.001g/cm3 | NA |
| X-ray Photoelectron Spectroscopy | Material and structural characterization | Micro2 Lab | litho/analytical | Thin film and powdered samples | NA | |
| 4 Probe Measurement (Manual) | Electrical characterization | Micro2 Lab | litho/analytical | Any substrate (material should not be sticky and should adhere to the substrate) | Sticky and soft samples are not allowed, Samples containing Na, K may require permission | NA |
| Karl Suss MJB4 Mask Aligner | Lithography | Nanoelectronics Processing Lab (NanoE bldg, 1st floor) | litho/analytical | Si,GaN, GaAs, Ge | sio2,si | Nitrogen |
| Olympus Microscope_2_Wet Chemistry Lab | Material and structural characterization | Wet Chemistry lab | litho/analytical | Si/ Glass: NA | NA | |
| UV-Vis-Spectrometer - Lambda 25 (7.1 Lab) | Material and structural characterization | EC Lab | litho/analytical | Si/Quartz | IS IT a solid state or solution state machine? It is solution state machine | NA |
| Ar-ion Milling | Reactive Ion Etch | Nanoelectronics Processing Lab (NanoE bldg, 1st floor) | gold contaminated | Ar | ||
| HRXRD | Material and structural characterization | MBE Clean Room 2 (NanoE bldg, Gr floor) | in line ac | Si, Ge, Glass, Sapphire, GaAs, GaN, STO | Only thin films | N.A |
| Sputter ATC 2200 | Deposition, Growth and Annealing systems | Nano Lab | semi clean b | Si, Ge | Si, Ge | Ar, N2 |
| Sputter Orion | Deposition, Growth and Annealing systems | Nano Lab | gold contaminated | Si, Ge, GaN,GaAs,LSMO,PCMO,YIG,SRO, (No Glass),Lithium Niobate | Photoresist, ebeam resist, Nb, NbN, Yb, Sn, Ge, Pt, Au, Gd, IrMn, Cr, YIG, Fe, Ni, Ta, Cu, Ru, Cr, MgO, Al2O3, SnGe alloy, Ti, CoFeB, SiO2, Al, Co, W, Ag, NiFe | Ar, N2, CDA |
| ALD (Non LL) | Deposition, Growth and Annealing systems | Nano Lab | semi clean b | Silicon, Germanium, III-V substrates,SiC,SiGe | NA | Nitrogen, Oxygen, Argon, Ammonia |
| ALD LL | Deposition, Growth and Annealing systems | Nano Lab | semi clean b | Silicon, Germanium | NA | Nitrogen, Oxygen, Argon, Ammonia |
| Multi-pocket Electron-beam Evaporator (4 target - GaN) | Deposition, Growth and Annealing systems | Nanoelectronics Processing Lab (NanoE bldg, 1st floor) | gold contaminated | Only semiconducting substrates are allowed. No glass. | Ti/ Al/ Ni/ Au | PN2 for venting |
| Temperature Dependent Spectral Response Measurement system - PL set up | Material and structural characterization | Applied Quantum Mechanics Lab 1(NanoE bldg, 5th floor) | clean | III-V compound semiconductors | III-V (Any material that may outgass at liquid helium temperatures are not allowed.) | NA |
| Transient Absorption Pump Probe Spectrometer | Material and structural characterization | Applied Quantum Mechanics Lab 1(NanoE bldg, 5th floor) | clean | III-V compound semiconductors | III-V comound semiconductors (GaN, InGAN, AlGaN...AlGaAs) | No gases required |
| Cryogenic I-V system | Electrical characterization | Applied Quantum Mechanics Lab 2(NanoE bldg, 5th floor) | gold contaminated | Si, Ge, SiC, Al2O3 | NA | NA |
| PPMS - Integrated cryogen-free system | Material and structural characterization | PPMS Lab | clean | Any semiconductor material, Usually thin solid film or devices made on thin solid films are allowed except any substrate in powder or liquid form. | Any semiconductor, thin solid film or devices made on thin solid films except anything that is in liquid or powder form. Metal contacts on semiconductor materials are allowed. | No gases are allowed |
| Piranha Cleaning | Bonding tools | Wet Chemistry lab | clean (for si) | Silicon wafers only | Only Si wafers, and Quartz glass | NA |
| Spinner 2 Inch (PDMS) | Miscellaneous | EC Lab | gold contaminated | Glass, Si, Quartz, GaN, G aAs | NA | |
| Scientific India Microscope | Miscellaneous | Wet Chemistry lab | in line ac | NA | NA | NA |
| Hot Plate -1-TP-250 deg C-NLL | Miscellaneous | Nano Litho Lab | gold contaminated | Si, III-V, Glass, Sapphire, Quartz, fused silica | All that is allowed in NYR | NA |
| Torrey Pines Low-temp Hotplate (max 180 deg C) | Miscellaneous | Nano Litho Lab | gold contaminated | Si, III-V, Glass, Sapphire, Quartz, fused silica | All that is allowed in NYR | NA |
| Double Side Mask Aligner MJB6 | Lithography | Nanoelectronics Processing Lab (NanoE bldg, 1st floor) | litho/analytical | Si, Ge, GaAs, GaN | All photoresist | PN2, GN2 |
| Spin Coater - Laurell (For Raith 150) | Lithography | Nano Litho Lab | litho/analytical | Photoresists | NA | |
| Sputter NMPF | Deposition, Growth and Annealing systems | Nano 2 Lab | gold contaminated | Si, Ge, GaN,GaAs,LSMO,PCMO,YIG,SRO, (No Glass) | O2, Ar, PN2 | |
| Parylene CVD SCS | Deposition, Growth and Annealing systems | EC Lab | gold contaminated | |||
| Rapid Thermal Process_NMPF Lab_General | Deposition, Growth and Annealing systems | Nano 2 Lab | gold contaminated | |||
| Deep Reactive Ion Etching Samco | Reactive Ion Etch | Nano 2 Lab | gold contaminated | Si, diamond | Photoresist, SiO2, SiN, EBL resist. | SF6, C4F8, O2, Ar, PN2, GN2 |
| RIE-1C Plasma Etcher - Samco | Reactive Ion Etch | Nanoelectronics Processing Lab (NanoE bldg, 1st floor) | gold contaminated | Si, SiO2, Poly Si, a-Si, Si Nitride, Resists | PN2, GN2, CF4, O2 | |
| Wire Bonder (TPT HB16)_Aluminium | Miscellaneous | MCL Lab | off line a | NA | ||
| Wafer Dicer ADT | Miscellaneous | Micro2 Lab | gold contaminated | |||
| Plasma Doping System | Deposition, Growth and Annealing systems | Nanoelectronics Processing Lab (NanoE bldg, 1st floor) | semi clean b | Si, Ge, C, Sn | only Group IV (Si, Ge, C, Sn) allowed. | PH3, B2H6, Ar, CHF3 , SiH4, O2, N2 |
| Molecular Beam Epitaxy III Nitrides | Deposition, Growth and Annealing systems | MBE Clean Room 1 (NanoE bldg, Gr floor) | semi clean a | |||
| Molecular Beam Epitaxy Si Ge Sn | Deposition, Growth and Annealing systems | MBE Clean Room 1 (NanoE bldg, Gr floor) | clean | Si, Ge, Sn | Si, Ge, Sn (Are available for Process) | NA |
| Gold Electroplating System | Deposition, Growth and Annealing systems | EC Lab | clean | |||
| Contact Angle System (Data Physics) | Material and structural characterization | Micro2 Lab | off line a | Any | Any | NA |
| PLD III | Deposition, Growth and Annealing systems | Nanoelectronics Processing Lab (NanoE bldg, 1st floor) | clean | Si, Ge, GaN | Gd2O3, HfO2, La2O3, LaAlO2, GdScO2, Re2O3, Sc2O3, ZrO2, PCMO (All are of 4N purity) | N2, Ar, O2 (At least 4N purity) |
| PLD IV | Deposition, Growth and Annealing systems | Nanoelectronics Processing Lab (NanoE bldg, 1st floor) | gold contaminated | Si, Ge, Sapphire | BDFO, GaO, AlGaO | Ar, O2, N2 |
| Cryogenic probe station | Electrical characterization | Device Characterization Lab(DC)(NanoE bldg, 3rd Floor) | gold contaminated | Si, Ge, III-V | Si, Ge, III-V and 2D materials | N2 |
| 4-arm glove box_7.1 lab | Bonding tools | Semiconductor Chiplets Packaging Lab | gold contaminated | Any | Water, acids are not allowed. Any use which leads to increase in moisture and oxygen level above 25 ppm are restricted. Use of chemicals are subject to mutual compatibility. | N2, Ar, He |
| 2-arm Glove Box | Bonding tools | 2D Materials and Devices Lab | gold contaminated | Any | Any except water and oxygen., Water, acids are not allowed. Any use which leads to increase in moisture and oxygen level above 25 ppm are restricted. Use of chemicals are subject to mutual compatibility. | N2, Ar, He |
| Nano Wet Bench | Bonding tools | Nano Lab | clean | Silicon,quartz,Ge | Nitrogen for drying | |
| AJA 6 Target E beam Evaporator | Deposition, Growth and Annealing systems | Nanoelectronics Processing Lab (NanoE bldg, 1st floor) | gold contaminated | Si, Ge, GaN, Quartz,Diamond | Photoresists | N2, CDA |
| 1.2 Lab wet bench | Bonding tools | Nanoelectronics Processing Lab (NanoE bldg, 1st floor) | clean | Silicon,quartz,Ge,GaN | IPA,Acetone,BHF,2%HF and HCL | Nitrogen for drying |
| Laser 2_4 | Deposition, Growth and Annealing systems | Nanoelectronics Processing Lab (NanoE bldg, 1st floor) | clean | |||
| RaithEBL_Long (min 3 hrs slot) | Lithography | Nano Litho Lab | litho/analytical | Si, III-V, Glass, Sapphire, Quartz, fused silica | All Materials allowed. Powdered material avoided Powdered materials considered only on case by case basis | N2 |
| Aries(Temperature Dependent IV/CV) | Electrical characterization | Device Characterization Lab(DC)(NanoE bldg, 3rd Floor) | litho/analytical | NA | ||
| Laser 1_3 | Deposition, Growth and Annealing systems | Nanoelectronics Processing Lab (NanoE bldg, 1st floor) | clean | |||
| MFP-3D-AFM | Material and structural characterization | MBE Clean Room 1 (NanoE bldg, Gr floor) | in line ac | All thin film substrates are allowed | ||
| Wire bonder (TPT HB05)_Gold | Miscellaneous | 2D Materials and Devices Lab | gold contaminated | Si/Metal | Gold wire bonds | NA |
| Magneto Optic Kerr Effect (MOKE) | Deposition, Growth and Annealing systems | Spintronics Lab | clean | |||
| Magnetoresistance Setup | Deposition, Growth and Annealing systems | Applied Quantum Mechanics Lab 2(NanoE bldg, 5th floor) | clean | |||
| Magnetoresistance Setup with Vector Network Anlyser (VNA) and Rotating stage | Deposition, Growth and Annealing systems | Spintronics Lab | clean | |||
| 2D Materials CVD | Deposition, Growth and Annealing systems | 2D Materials and Devices Lab | clean | Si, Quartz, Sapphire | Molybdenum, tungsten, sulphur - powders | N2, AR |
| LabRAM HR Evolution-RAMAN | Material and structural characterization | 2D Materials and Devices Lab | gold contaminated | Si | No liquid or powder samples | NA |
| Rapid Thermal Processing GaN (RTP GaN) | Deposition, Growth and Annealing systems | Nanoelectronics Processing Lab (NanoE bldg, 1st floor) | gold contaminated | GaAs, GaN, Sapphire | GaN, GaAs, AlGaN | Nitrogen, Oxygen, Argon, H2 |
| EBL Voyager | Lithography | Nano 2 Lab | litho | Si, III-V, Glass, Sapphire, Quartz, fused silica | All Materials allowed. Powdered material avoided | N2 |
| DektakXT Profilometer_1.1 Lab | Material and structural characterization | Nanoelectronics Processing Lab (NanoE bldg, 1st floor) | clean | Si, Ge, Glass, Sapphire | No sticky and soft sample allowed. Density should be greater than 1.001g/cm3 | NA |
| Plasma Asher New | Deposition, Growth and Annealing systems | Nano 2 Lab | clean | Si, GaN, Diamond | oxygen | |
| PECVD_Ultech_Cluster_Tool | Deposition, Growth and Annealing systems | Nano 2 Lab | gold contaminated | Si,Ge,GaN,Diamond,Quartz | SiO2, SiN, amorphous Si | SiH4,NH3,N2O, Ar/N2,O2, CF4/SF6, B2H6, PH3,CHF3 |
| New ALD | Deposition, Growth and Annealing systems | Nano Lab | clean | |||
| ICPRIE - Dia | Reactive Ion Etch | Nanoelectronics Processing Lab (NanoE bldg, 1st floor) | semi clean a | Si, SiN, SiO2, SiC and Diamond | Only Photoresist is allowed as hard mask | CL2, BCL3,CHF3,O2,N2,CF4,Ar,SF6,He |
| DRIE - SiC | Deposition, Growth and Annealing systems | Nano 2 Lab | clean | |||
| MTJ Sputter | Deposition, Growth and Annealing systems | Nano 2 Lab | semi clean b | Argon | ||
| Woollam Ellipsometer | Material and structural characterization | Nano Lab | in line ac | The substrate can be metals, semiconductors, dielectrics, different types of glasses etc. | The measurable films can be metals (thickness <50nm), non-metals, semiconductors, dielectrics (thickness range 1nm to 5micron) | NA |
| Hot Plate -9-TP-180 deg C-1.2L | Deposition, Growth and Annealing systems | Nanoelectronics Processing Lab (NanoE bldg, 1st floor) | clean | |||
| Hot Plate -2-TP-150 deg C-NLL | Deposition, Growth and Annealing systems | Nano Litho Lab | clean | |||
| Hot Plate-3-TP-150 deg C-NLL | Deposition, Growth and Annealing systems | Nano Litho Lab | clean | |||
| Flake transfer setup | Deposition, Growth and Annealing systems | 2D Materials and Devices Lab | gold contaminated | |||
| RIE_Ultech_Cluster_Tool | Deposition, Growth and Annealing systems | Nano 2 Lab | gold contaminated | Si,Ge,GaN,Diamond,Quartz | SiO2, SiN, amorphous Si, W, HfO2,TiN | SiH4,NH3,N2O, Ar/N2,O2, CF4/SF6, B2H6, PH3,CHF3 |
| Optoelectronic measurment setup | Deposition, Growth and Annealing systems | 2D Materials and Devices Lab | gold contaminated | |||
| Power Device Characterization System | Electrical characterization | Device Characterization Lab(DC)(NanoE bldg, 3rd Floor) | clean | |||
| Testing Tool on internet | Deposition, Growth and Annealing systems | 1.1 Lab Corridor | clean (III,V compounds) | vdbshkvbkjsbv | vshdvhsbjkvbjsbdvsdv?@!${} | vhdcvhsvhvhsdbvjsbdvbjksdbvshbvsd |
| Thermal Evaporator - Al (Prof. SM) | Deposition, Growth and Annealing systems | Semiconductor Chiplets Packaging Lab | gold contaminated | |||
| Hot Plate -6-RCA-WCL | Deposition, Growth and Annealing systems | Wet Chemistry lab | clean | |||
| Hot Plate -5-TMAH-WCL | Deposition, Growth and Annealing systems | Wet Chemistry lab | clean | |||
| Hot Plate -4-TA-80 deg C-NL | Deposition, Growth and Annealing systems | Nano Lab | clean | |||
| Microscope | Deposition, Growth and Annealing systems | Spectroscopy Lab (Lab is under renovation) | clean | |||
| Hot Plate -10-TA-150 deg C-1.2L | Deposition, Growth and Annealing systems | Nanoelectronics Processing Lab (NanoE bldg, 1st floor) | clean | |||
| Hot Plate -7-GP-180 deg C- Overnight Lift off-WCL | Deposition, Growth and Annealing systems | Wet Chemistry lab | clean | |||
| Hot Plate -8-GP-150 deg C-WCL | Deposition, Growth and Annealing systems | Wet Chemistry lab | clean | |||
| THAM wet bench user_specific_processes approved by process committee | Deposition, Growth and Annealing systems | Wet Chemistry lab | clean | |||
| THAM wet bench_Mask_etching | Deposition, Growth and Annealing systems | Wet Chemistry lab | clean |
